SavantIC Semiconductor Product Specification 2SC4881 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-Peak 8 A IB Base current 1 A PC Collector power dissipation Ta=25 2.0 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4881 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.125A 0.4 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.125A 1.3 V ICBO Collector cut-off current VCB=50V; IE=0 1 µA IEBO Emitter cut-off current VEB=6V; IC=0 1 µA hFE-1 DC current gain IC=1A ; VCE=1V 100 hFE-2 DC current gain IC=2.5A ; VCE=1V 60 Transition frequency IC=1A ; VCE=4V 100 MHz Collector output capacitance IE=0; f=1MHz;VCB=10V 45 pF 0.1 µs 0.8 µs 0.1 µs fT COB CONDITIONS MIN TYP. MAX 50 UNIT V 320 Switching times ton Turn-on time ts Storage time tf Fall time IC=2.5A IB1=-IB2=0.125A VCC=30V ,RL=12@ Duty cycleA1% 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC4881 SavantIC Semiconductor Product Specification 2SC4881 Silicon NPN Power Transistors 4