SAVANTIC 2SC4370

SavantIC Semiconductor
Product Specification
2SC4370
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SA1659
·High transition frequency
APPLICATIONS
·High voltage applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
160
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1.5
A
IB
Base current
0.15
A
PC
Collector dissipation
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC4370
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
1.5
V
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
1.0
V
ICBO
Collector cut-off current
VCB=160V; IE=0
1.0
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
µA
hFE
DC current gain
IC=0.1A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=10V
100
MHz
Collector output capacitance
f=1MHz;VCB=10V
25
pF
fT
COB
CONDITIONS
hFE Classifications
O
Y
70-140
120-240
2
MIN
TYP.
MAX
160
UNIT
V
70
240
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SC4370