SAVANTIC 2SC3258

SavantIC Semiconductor
Product Specification
2SC3258
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1293
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-Peak
8
A
IB
Base current
1
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC3258
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector -emitter breakdown voltage
IC=10mA ,IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.15A
0.4
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.15A
1.2
V
ICBO
Collector cut-off current
VCB=100V; IE=0
1
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
µA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
hFE-2
DC current gain
IC=3A ; VCE=1V
40
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
80
pF
fT
Transition frequency
IC=1A ; VCE=4V
120
MHz
0.2
µs
1.0
µs
0.1
µs
80
UNIT
V
240
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3.0A IB1=- IB2=0.15A
RL=10A;VCCB30V
hFE-1 Classifications
O
Y
70-140
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SC3258
SavantIC Semiconductor
Product Specification
2SC3258
Silicon NPN Power Transistors
4