SAVANTIC 2SD1375

SavantIC Semiconductor
Product Specification
2SD1375
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for line operated audio output
amplifier ,and switching power supply
drivers applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
4
A
90
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=75
SavantIC Semiconductor
Product Specification
2SD1375
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=30mA ;IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
2
MIN
30
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD1375