Inchange Semiconductor Product Specification 2SD1375 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for line operated audio output amplifier ,and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V 4 A 90 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=75℃ Inchange Semiconductor Product Specification 2SD1375 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=30mA ;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 2 MIN 30 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD1375 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3