SavantIC Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 5 V IC Collector current 4 A ICM Collector current-peak 15 A IBM Base current 3.5 A PC Collector power dissipation 70 W Tj Junction temperature 130 Tstg Storage temperature -55~130 TC=25 SavantIC Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=1A 1.5 V VCB=750V; IE=0 50 µA VCB=1500V; IE=0 1 mA ICBO 5 UNIT V Collector cut-off current hFE DC current gain IC=3A ; VCE=10V VF Diode forward voltage IC=-4A 5 15 2.2 V 9 µs 0.8 µs Switching times tstg Storage time 4 IC=3A IBend=1A;LLeak=5µH tf Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SD1632