SavantIC Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 8 A PC Collector dissipation TC=25 20 W 2 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 60 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=? 60 V V(BR)EBO Base-emitter breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=2A ; IB=0.2A 0.4 1.0 V VBE Base-emitter voltage IC=0.5A ; VCE=5V 0.8 1.0 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V;IC=0 0.1 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 70 hFE-2 DC current gain IC=3A ; VCE=5V 20 fT Transition frequency IC=0.5A ; VCE=5V 100 MHz Cob Output capacitance IE=0 ; VCB=10V; f=1MHz 40 pF VCEsat hFE-1 classifications Q R S 70-140 100-200 140-280 2 280 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1913 SavantIC Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors 4