SAVANTIC 2SD2386

SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2386
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB1557
·High breakdown voltage:VCEO=140V(Min)
APPLICATIONS
·Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
7
A
0.1
A
70
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD2386
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=6mA
2.5
V
VBE
Base-emitter voltage
IC=6A ; VCE=5V
3.0
V
ICBO
Collector cut-off current
VCB=140V IE=0
5.0
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5.0
µA
hFE-1
DC current gain
IC=6A ; VCE=5V
5000
hFE-2
DC current gain
IC=10A ; VCE=5V
2000
Cob
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
90
pF
Transition frequency
IC=1A ; VCE=5V
30
MHz
fT
CONDITIONS
hFE-1 Classifications
A
B
C
5000-12000
9000-18000
15000-30000
2
MIN
TYP.
MAX
140
UNIT
V
30000
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD2386