SavantIC Semiconductor Product Specification BD707 BD709 BD711 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS ·Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BD707 VCBO VCEO Collector-base voltage Collector-emitter voltage BD709 Open emitter Emitter-base voltage IC 80 BD711 100 BD707 60 BD709 UNIT 60 Open base BD711 VEBO VALUE V 80 100 Open collector 5 V Collector current-DC 12 A ICM Collector current-Pulse 18 A IB Base current 5 A PT Total dissipation 75 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 1.67 /W SavantIC Semiconductor Product Specification BD707 BD709 BD711 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD707 VCEO(SUS) Collector-emitter sustaining voltage BD709 VBE IC=0.1A, IB=0 100 1.0 V Base-emitter voltage IC=4A , VCE=4V 1.5 V VCB=60V, IE=0 TC=150 VCB=80V, IE=0 TC=150 VCB=100V, IE=0 TC=150 0.1 1.0 0.1 1.0 0.1 1.0 mA 0.1 mA 1.0 mA Collector cut-off current BD709 Collector cut-off current BD707 VCE=30V, IB=0 BD709 VCE=40V, IB=0 BD711 VCE=50V, IB=0 Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=2V 40 hFE-2 DC current gain only for BD707/709 IC=2A ; VCE=2V 30 hFE-3 DC current gain IC=4A ; VCE=2V 15 BD707 DC current gain BD709 5 IC=10A ; VCE=4V Transition frequency 120 400 150 10 8 BD711 fT V 80 IEBO hFE-4 UNIT IC=4A ,IB=0.4A BD711 ICEO MAX Collector-emitter saturation voltage BD707 ICBO TYP. 60 BD711 VCEsat MIN 8 IC=0.3A;VCE=3V; 2 3 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD707 BD709 BD711