SAVANTIC D45H8

SavantIC Semiconductor
Product Specification
D45H8
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·For general purpose power amplifications
and switching regulators,converters and
power amplifiers applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-10
A
ICM
Collector current-Peak
-20
A
PD
Total power dissipation
TC=25
50
Ta=25
1.67
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
D45H8
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-10mA IB=0,
VCEsat
Collector-emitter saturation voltage
IC=-8A ;IB=-0.4A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-8A ;IB=-0.8A
-1.5
V
ICES
Collector cut-off current
VCE=-80V; VBE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-2A ; VCE=-1V
60
hFE-2
DC current gain
IC=-4A ; VCE=-1V
40
fT
Transition frequency
IC=-0.5A ; VCE=-10V
40
MHz
Ccb
Collector capacitance
f=1MHz ; VCB=-10V
230
pF
135
ns
0.5
µs
0.10
µs
-60
UNIT
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A IB1=- IB2=-0.5A
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
D45H8