SKR 18,2 Qu bond Absolute Maximum Ratings Symbol Conditions VRRM IF(AV) 2 Values Unit Tj = 25 °C, IR = 2 mA 1600 V Tc = 80 °C, Tj = 150 °C 320 A 151250 A2s Tj = 25 °C 7000 A Tj = 150 °C 5500 A 150 °C It Tj = 150 °C, 10 ms, sin 180° IFSM 10 ms sin 180° Tjmax DIODE Electrical Characteristics IF(DC) = 380 A VRRM = 1600 V Size: 18,2 mm x 18,2 mm SKR 18,2 Qu bond Symbol Conditions IR VF min. typ. max. Unit Tj = 25 °C, VRRM 2 mA Tj = 120 °C, VRRM 3.3 mA Tj = 25 °C, IF = 360 A 1 1.21 V Tj = 125 °C, IF = 360 A 0.9 1.1 V V(TO) Tj = 125 °C 0.83 V rT Tj = 125 °C 0.5 mΩ trr Tj = 25 °C, ± 1 A 53 µs Thermal Characteristics Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Typical Applications Symbol Conditions min. typ. max. Unit °C Tj -40 150 Tstg -40 150 °C Tsolder 10 min. 250 °C Tsolder 5 min. 320 °C Rth(j-c) Semipack 2 assembly 0.18 K/W Values Unit 18,2 x 18,2 mm 331,24 mm2 • uncontrolled rectifier bridges Mechanical Characteristics Symbol Conditions Raster size Area total Anode bondable (Al) Cathode solderable (Ag/Ni) Al, diameter ≤ 500 µm Wire bond Package tray Chips / Package 16 pcs SKR © by SEMIKRON Rev. 0 – 02.10.2009 1 SKR 18,2 Qu bond This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 Rev. 0 – 02.10.2009 © by SEMIKRON