SKR 12,4 Qu bond Absolute Maximum Ratings Symbol Conditions VRRM IF(AV) 2 Values Unit Tj = 25 °C, IR = 0.2 mA 1600 V Ts = 80 °C, Tj = 150 °C 190 A 26450 A2s Tj = 25 °C 3200 A Tj = 150 °C 2300 A 150 °C It Tj = 150 °C, 10 ms, sin 180° IFSM 10 ms sin 180° Tjmax DIODE Electrical Characteristics IF(DC) = 235 A VRRM = 1600 V Size: 12,4 mm x 12,4 mm SKR 12,4 Qu bond Symbol Conditions IR VF min. typ. max. Unit Tj = 25 °C, VRRM 0.2 mA Tj = 120 °C, VRRM 1.1 mA Tj = 25 °C, IF = 160 A 1 1.21 V Tj = 125 °C, IF = 160 A 0.9 1.1 V V(TO) Tj = 125 °C 0.83 V rT Tj = 125 °C 1.0 mΩ trr Tj = 25 °C, ± 1 A 34 µs Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Typical Applications • uncontrolled rectifier bridges Thermal Characteristics Symbol Conditions min. typ. max. Unit °C Tj -40 150 Tstg -40 150 °C Tsolder 10 min. 250 °C Tsolder 5 min. 320 °C Rth(j-s) soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.27 K/W Values Unit 12,4 x 12,4 mm 153,76 mm2 Mechanical Characteristics Symbol Conditions Raster size Area total Anode bondable (Al) Cathode solderable (Ag/Ni) Al, diameter ≤ 500 µm Wire bond Package tray Chips / Package 36 pcs SKR © by SEMIKRON Rev. 0 – 22.09.2009 1 SKR 12,4 Qu bond This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 Rev. 0 – 22.09.2009 © by SEMIKRON