MMDT1P434 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector (Output) Base (Input) R1 R2 Emitter (Common) SOT-23 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE 50 - - - -ICBO - - 0.1 µA -V(BR)CEO 50 - - V -VCE(sat) - - 0.3 V -VI(on) - - 1.7 V -VI(off) 0.5 - - V Input Resistor R1 3.29 4.7 6.11 KΩ Input Resistor R2 15.4 22 28.6 KΩ R 2 / R1 3.6 4.5 5.5 - fT - 250 - MHz DC Current Gain at -VCE = 5 V, -IC = 5 mA Collector Base Cutoff Current at -VCB = 50 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Input On Voltage at -VCE = 0.2 V, -IC = 5 mA Input Off Voltage at -VCE = 5 V, -IC = 100 µA Resistance Ratio Transition Frequency at -VCE = 10 V, IE = 5 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/01/2008