MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups A, B, C, D and E, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 700 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 700 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA Base Emitter On Voltage at -VCE = 6 V , -IC = 10 mA Output Capacitance at -VCB = 6 V, IE = 0, f = 1 MHz Transition Frequency at -VCE = 6 V, -IC = 10 mA A B C D E C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE hFE 110 135 170 200 250 50 - 180 220 270 320 400 - - -ICBO - - 100 nA -IEBO - - 100 nA -V(BR)CBO 30 - - V -V(BR)CEO 25 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 0.6 V -VBE(on) 0.6 - 0.7 V Cob - 17 - pF fT - 160 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/11/2007 MMBTSB624 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/11/2007