ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 6 V Collector Current IC 4 A Collector Peak Current ICM 7 A Base Current IB 1 A Power Dissipation at TA = 25 OC PD 1.25 mW Power Dissipation at TC = 25 OC PD 36 mW Operating and Storage Temperature Range TS - 65 to + 150 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 500 mA at VCE = 1 V, IC = 2 A at VCE = 2 V, IC = 1 A at VCE = 5 V, IC = 10 mA Collector Base Cutoff Current at VCB = 120 V Collector Emitter Cutoff Current at VCE = 100 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 2 A, IB = 200 mA Base Emitter On Voltage at VCE = 1 V, IC = 2 A Transition Frequency at VCE = 1 V, IC = 250 mA C O Symbol Min. Max. Unit hFE hFE hFE hFE 100 15 100 15 260 260 - - ICBO - 100 µA ICES - 100 µA IEBO - 1 mA V(BR)CEO 100 - V VCE(sat) - 0.8 V VBE(on) - 1.5 V fT 3 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 19/06/2008 CD