SPECIFICATION ITEM WHITE SIDE VIEW LED MODEL SWAF3L CUSTOMER Customer Approved by Approved by Approved by / / / Supplier Drawn by Checked by Approved by / / / SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L Contents 1. Features 02 2. Application 02 3. Absolute Maximum Ratings 03 4. Electro-Optical Characteristics 03 5. CIE Chromaticity Diagram 04 6. Characteristic Diagram 05 7. Reliability 08 8. Precautions 09 9. Soldering Profile 10 10. Outline Dimension 11 11. History 12 SSC-QP-7-03-44(갑) 1 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 1. Features Package: SMT Solderability Dimension : 7.0 × 2.0 × 1.9 (mm) Low Thermal Resistance RoHS Compliant, Lead Free 6-Pin (Blue separate) type Own Patent Reserved SWAF3L is Very Useful Side View LED in Back Light Unit Application 2. Applications Flat Backlighting (LCD, Display) Camera, PDA, CNS, Notebook Coupling into Light Guide Panel Illuminations SSC-QP-7-03-44(갑) 2 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 3. Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Value Unit Power Dissipation Pd*1 280 mW IF 80 mA IFM*2 200 mA V Forward Current Peak Forward Current Reverse Voltage VR 5 Operating Temperature Topr -30 ~ +85 ° Storage Temperature Tstg -40 ~ +100 ° Thermal Resistance (junction to solder) Junction Temperature *1 *2 RΘj-s 70 Tj max 125 C C ° C/W ° C Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product. IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10 4. Electro-Optical Characteristics (Ta = 25°C) Item Symbol Condition Min Typ Max Unit IF = 20 mA/CHIP VR = 5 V IF = 20 mA/CHIP 2.9 - 3.2 - 3.6 100 Thermal Resistance(Junction to solder) VF IR RΘj-s V µA ℃/W Forward Voltage Reverse Current *1 Viewing Angle Color Coordinates Life Time*4 *3 Rank M1 4100 - 4400 Rank M4 4400 - 4700 4700 - 5000 Rank N0 5000 - 5300 Rank N3 5300 - 5600 0.264 0.248 0.287 0.276 0.307 0.294 120 15000 hrs Rank M7 Luminous Intensity *2 70 IV IF = 60 mA 2θ1/2 IF = 60 mA x Rank b y x Rank e IF = 60 mA y x Rank f y Ta =25℃, IF=20 mA/CHIP mcd ˚ 0.296 0.295 0.311 0.315 0.330 0.339 - - *1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. *3 Measurement Uncertainty of the Color Coordinates is ±0.01 *4 Estimated time to 50% degradation of initial luminous intensity.(A chip = 20mA) * Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul Semiconductor. SSC-QP-7-03-44(갑) 3 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 5. CIE Chromaticity Diagram 0.9 0.7 y Coord. 0.6 0.5 0.4 0.3 0.2 0.34 0.32 y Coord. 0.8 0.36 520 515 525530 535 540 510 545 550 555 505 560 565 570 500 575 580 585 590 495 595 600 610 620 490 630 830 0.0 0.0 480 475 470 460 0.1 0.30 e 0.28 b 0.26 485 0.1 f 0.24 0.2 0.3 0.4 0.5 0.6 0.7 0.22 0.24 0.8 0.26 0.28 x Coor d. 0.30 0.32 0.34 0.36 x Coor d. Luminous Intensity Ranking by Color Coordinates Ranking by Luminous Intensity b e f RANK Min Max Unit M1 4100 4400 √ √ M4 4400 4700 √ √ M7 4700 5000 √ √ √ N0 5000 5300 √ √ N3 5300 5600 √ √ mcd The Checked ranks are available (IF = 60 mA, Ta = 25°C) Color Rank b e f x y x y x y 0.264 0.280 0.296 0.287 0.267 0.248 0.276 0.295 0.296 0.311 0.307 0.287 0.276 0.294 0.315 0.295 0.311 0.330 0.330 0.307 0.294 0.318 0.339 0.315 SSC-QP-7-03-44(갑) 4 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 6. Characteristic Diagram Forward Current vs. Forward Voltage Intensity vs. Forward Current 100 Ta = 25 C 1.4 Intensity ratio [mcd] Forward Current [mA] O 10 1 Ta = 25 C O 1.2 1.0 0.8 0.6 0.4 0.2 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 20 Forward Voltage [ V] 40 60 80 100 Forward Current [mA] Forward Current vs. Ambient Temperature Radiation Diagram ( Tj max = 125 °C ) 80 1.0 Ta = 25 C O x axis y axis 60 50 Intensity Forward current [mA] 70 40 30 20 0.5 10 0 -3 0 -1 5 0 15 30 45 60 75 y 90 o A m b ie n t te m p e ra tu re [ C ] x 0.0 -100 -80 -60 -40 -20 0 20 40 60 80 100 Theta SSC-QP-7-03-44(갑) 5 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L Color Coordinate vs. Forward Current Spectrum 0.30 Ta = 25 C 90 mA O Ta = 25 C IF = 20 mA Intensity [%] y Coord. O 0.29 10 mA 0.28 0.280 0.285 0.290 0.295 0.300 400 x Coord. 500 600 700 800 Wavelength [nm] Forward Voltage vs. Ambient Temperature Color Coordinate vs. Ambient Temperature 0.300 1.08 IF = 60 mA IF = 60 mA 0.295 1.06 o -30 C 1.04 y Coord. O VF / VF [25 C] o 25 C 1.02 0.290 0.285 1.00 0.98 0.280 0.96 -30 -15 0 15 30 45 60 75 0.280 0.285 0.290 0.295 0.300 0.305 0.310 90 o x Coord. Ambient Temperature [ C] SSC-QP-7-03-44(갑) o 85 C 6 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L Relative Luminosity vs. Ambient Temperature Allowable Forward Current vs. Duty Ratio 1.1 Allowable Forward Current [mA] 220 o Iv / Iv [25 C] 1.0 0.9 0.8 0.7 -30 -15 0 15 30 45 60 75 90 Ta = 25 C O 200 180 160 140 120 100 80 60 40 20 1 o Ambient Temperature [ C] 10 * Pulse width SSC-QP-7-03-44(갑) 100 Duty Ratio [%] 7 TW ≤ 0.1ms SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 7. Reliability (1) TEST ITEMS AND RESULTS Note Number of Damaged Ta = 25°C; IF = 80 mA 1,000 hr 0/20 Ta = 60°C; RH = 90%, IF = 60 mA 1,000 hr -30°C ~ 85°C 20 cycle 0/50 Ta = 85°C; IF = 60mA 1,000 hr 0/20 - Low Temperature Life Test Ta = - 40°C; IF = 80 mA 1,000 hr 0/20 - High Temperature Storage Ta = 100°C 1,000 hr 0/50 Low Temperature Storage Ta = - 40°C 1,000 hr 0/50 Ta = 60°C; RH = 90% 1,000 hr 0/20 1 time 0/50 TEST ITEM Test conditions Life Test 1 High Humidity Heat Life Test Thermal Shock (30 min) (30 min) High Temperature Life Test*1 Humidity Heat Storage ESD *1 Human Body Mode : 1 kV Reference EIAJ ED-4701 100 101 EIAJ ED-4701 100 102 EIAJ ED-4701 300 307 EIAJ ED-4701 200 201 EIAJ ED-4701 200 202 MIL-STD 888E TEST CONDITION : PCB (Material : FR-4, Thickness : 1.6T) -Operating Condition : RΘ = 140 ºC/W. (2) CRITERIA FOR JUDGING THE DAMAGE Item Symbol Test Condition Criteria for Judgment Min. Max. Forward Voltage VF IF = 60 mA - U.S.L × 1.2 Reverse Current IR VR = 5 V - U.S.L × 2.0 Luminous Intensity IV IF = 60 mA L.S.L × 0.7 - U.S.L. : Upper Standard Level, SSC-QP-7-03-44(갑) L.S.L. : Lower Standard Level 8 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 8. Precautions (1) Storage conditions Keep the product in a dry box or a desiccator with a desiccant in order to prevent moisture absorption. a. Keep it at a temperature in the range from 5°C to 30°C and at a humidity of less than 60% RH. In case of being stored for more than 3 months, the product should be sealed with Nitrogen gas. (2) After opening the package When soldering, this could result in a decrease of the photoelectric effect or light intensity. a. Soldering should be done right after mounting the product. b. Keep the temperature in the range from 5°C to 40°C and the humidity at less than 30%. Soldering should be done within 7 days after opening the desiccant package. If the product has been exposed for more than 7 days after opening the package or the indicating color of the desiccator changes, the product must be baked at a temperature between 60°C and 65°C for 10 to 12 hours. An unused and unsealed product should be repacked in a desiccant package and kept sealed in a dry atmosphere. (3) Precautions for use Any external mechanical force or excessive vibration should not be applied to the product during cooling after soldering, and it is preferable to avoid rapid cooling. The product should not be mounted on a distorted part of PCB. Gloves or wrist bands for ESD(Electric Static Discharge) should be wore in order to prevent ESD and surge damage, and all devices and equipments must be grounded to the earth. (4) Miscellaneous Radiation resistance is not considered. When cleaning the product, any kind of fluid such as water, oil and organic solvent must not be used and IPA(Isopropyl Alcohol) must be used. When using the product, operating current should be settled in consideration of the maximum ambient temperature. Its appearance or specification for improvement is subject to change without notice. SSC-QP-7-03-44(갑) 9 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 9. Soldering Profile The LED can be soldered in place using the reflow soldering method. (1) Lead solder Preliminary heating to be at maximum 210°C for maximum 2 minutes. Soldering heat to be at maximum 240°C for maximum 10 seconds. o Device Surface Temperature [ C] 280 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 135 150 165 180 195 Soldering Times [sec] (2) Lead-free solder Preliminary heating to be at maximum 220°C for maximum 2 minutes. Soldering heat to be at maximum 260°C for maximum 10 seconds. o Device Surface Temperature [ C] 280 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 135 150 165 180 195 Soldering Times [sec] (3) Hand Soldering conditions Not more than 5 seconds @MAX 300°C, under Soldering iron. SSC-QP-7-03-44(갑) 10 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 10. Outline Dimension ( Tolerance : ±0.2, Unit : mm ) 2.00 2.00 0.50 1.55 0.50 1.90 1.90 0.15 7.00 Recommended solder pad ↑ Lighting Direction ↑ 7.00 1.65 ⑥ ⑤ 0.4 ④ ③ ② ① 1.0 1.1 0.3 0.5 0.8 0.8 0.5 SSC-QP-7-03-44(갑) 11 SEOUL SEMICONDUCTOR CO., LTD. Rev. 5.00 SWAF3L 13. History Rev. No. 1.00 Contents - The institution of New Spec. Date 2008. 06. 03 Published by SEOUL SEMICONDUCTOR CO., LTD. http://www.seoulsemicon.com 148-29, Gasan-Dong, Geumcheon-Gu, Seoul, 153-801. South Korea © All Right Reserved. SSC-QP-7-03-44(갑) 12 SEOUL SEMICONDUCTOR CO., LTD.