SITI DL313

42-DL313
Version
: A.004
Issue Date : 2004/06/17
File Name : SP-DL313-A.004.doc
Total Pages : 6
Optical Fiber Receiving IC
新竹市展業一路九號 7 樓之 1
SILICON TOUCH TECHNOLOGY INC.
42-DL313
9-7F-1, Prosperity Road I, Hsin-Chu, Taiwan, R.O.C.
Tel:886-3-5645656
Fax:886-3-5645626
點晶科技股份有限公司
42-DL313
SILICON TOUCH TECHNOLOGY INC.
OPTICAL FIBER RECEIVING IC
GENERAL DESCRIPTION
42-DL313 receiver is designed for the application of high-speed optical fiber transmission.
As an OEIC, 42-DL313 integrates photo sensor, ATC (Automatic Threshold Control) and signal
processing circuit for high-speed application, and is fabricated by using CMOS technology.
42-DL313 is designed to operate by positive logic in which the output voltage is set to high
level when optical flux is received.
FEATURES
1. Low jitter (Δtj: Typical 1ns)
2. High speed (Up to 13.2Mb/s, NRZ signal)
3. Built-in photo sensor and signal processing circuit.
4. Built-in ATC (Automatic Threshold Control) circuit used for stabilized output at a wide range
of optical power level
BLOCK DIAGRAM And APPLICATION CIRCUIT
VDD
VDD
42-DL313
AVDD
AMP
DVDD
COMP
OUT
ATC
AVSS
42-DL313-A.004
DVSS
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Version:A.004
點晶科技股份有限公司
42-DL313
SILICON TOUCH TECHNOLOGY INC.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃
℃)
Item
Supply Voltage
Power dissipation
Operating Temperature
Storage Temperature
High Level Output Current
Low Level Output Current
Symbol
VDD
P
Topr
Tstg
IOH
IOL
Rating
-0.5 to +7
100
-40 to +90
-55 to +100
-1
20
Unit
V
mW
℃
℃
mA
mA
RECOMMENDED OPERATING CONDITIONS
ITEM
SYMBOL
Supply Voltage
VDD
Operating Temperature
High Level Output Current
Low Level Output Current
Topr
IOH
IOL
MIN
2.7
4.75
-40
TYP
3.0
5.0
25
MAX
3.6
5.25
90
-150
1.6
UNIT
V
V
℃
uA
mA
ELECTRICAL CHARACTERISTICS
ITEM
Peak sensitivity
wavelength
Maximum Input Optical
Power for High level
Minimum Input Optical
Power for High level
Current Consumption
High Level Output
Voltage
Low Level Output
Voltage
SYMBOL
CONDITIONS
λP
Room temperature (25℃
℃)
PC,MAX
PC,MIN
IDD
VOH
IOH = -0.15mA
VOL
IOL = -1.6mA
Rise Time
Tr
Fall Time
Tf
Pulse Width Distortion
(note.1)
Δtw
Jitter
Δt j
Data Rate
Input optical
wavelength = 650nm
VDD = 3V, Input optical
wavelength = 650nm,
VDD = 5V, Input optical
wavelength = 650nm,
VDD=3V, no input
VDD=5V, no input
FDATA
VDD = 3V, CL = 10pF
VDD = 5V, CL = 10pF
VDD = 3V, CL = 10pF
VDD = 5V, CL = 10pF
Pulse frequency = 6.6MHz
CL = 10pF
PC = -17.5dBm
PC = -27dBm, VDD = 3V
NRZ Code, Duty = 50%
MIN.
TYP.
MAX
700
UNIT
nm
-17.5
dBm
-27
dBm
-24.5
2
3
mA
2.4
VDD
V
0
0.4
V
7.5
5
7.5
5
-7.5
7.5
1
3
0.1
10
6
10
6
5
10
13.2
ns
ns
ns
ns
Mb/s
Note.1 Between input of an optical fiber transmitting module and output of 42-DL313.
42-DL313-A.004
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Version:A.004
點晶科技股份有限公司
42-DL313
SILICON TOUCH TECHNOLOGY INC.
PAD DESCRIPTIONS
Pad Name
VDD_A
VDD_D
VSS_A
VSS_D
OUT
Size (μ
μm)
100×100
100×100
100×100
100×100
100×100
Center Coordinate (μ
μm)
(84.7, 75.0)
(84.7, 743.15)
(443.4, 87.4)
(659.4, 87.4)
(938.1, 87.4)
I/O
Power
Power
Ground
Ground
Output
Description
Analog Power
Digital Power
Analog Ground
Digital Ground
TTL Output
DIE CONFIGURATION (inμ
μm)
(1048.6, 816.85)
VDD_D
PHOTODIODE
(719.0, 492.0)
VDD_A
VSS_A
VSS_D
OUT
(0.0)
Die Size: 1048.6um×816.85um
PD Size: 250000um2×1
The Center Coordinates of PD: (719.0um, 492.0um)
* Note: SiTI reserves the right to alter the device geometry and manufacturing
processes without prior notice. Though these alterations may result in
geometrical changes, they will not affect die electrical characteristics and
pad layouts in any sense.
42-DL313-A.004
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Version:A.004
點晶科技股份有限公司
42-DL313
SILICON TOUCH TECHNOLOGY INC.
REQUIREMENTS FOR WAFER DELIVERY
Material: Silicon with P-Substrate
Diameter: 6 inches(≒15cm)
Thickness: 12 mils(≒300um)
Scribe Line Width: 110um
Malfunctioned die:Marked with red ink or equivalent marking
HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION
(1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during
moving, storing and processing 42-DL313.
(2) Process 42-DL313 in a clean room with proper temperature and humidity.
(3) Ground all working machines and workers wear anti-electrostatic ring to ground during
processing.
(4) Avoid contact 42-DL313 with bare hands .If unavoided, wear anti-electrostatic ring and use
anti-electrostatic tool to pick it up.
GUARANTED TEMPERATURE AND RETENTION CYCLE
(1) The device/wafer 42-DL313 should be stored in the nitrogenous chest. The conditions suggested
are as follows:
Temperature = 23±3℃
Relative Humidity = 50±10%
Minimum nitrogen inflow = 3 liters/minute
(2) If the device/wafer, 42-DL313 is incidentally exposed to the air, use it for manufacturing as soon
as possible.
(3) Under the storage environment specified in item (1), six-month safe storage period is
guaranteed.
42-DL313-A.004
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Version:A.004
點晶科技股份有限公司
42-DL313
SILICON TOUCH TECHNOLOGY INC.
The products listed herein are designed for ordinary electronic applications, such as
electrical appliances, audio-visual equipment, communications devices and so on. Hence,
it is advisable that the devices should not be used in medical instruments, surgical
implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention
equipment and the like. Misusing those products may directly or indirectly endanger
human life, or cause injury and property loss.
Silicon Touch Technology, Inc. will not take any responsibilities regarding the
misusage of the products mentioned above. Anyone who purchases any products
described herein with the above-mentioned intention or with such misused applications
should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its
distributors and all their officers and employees shall defend jointly and severally against
any and all claims and litigation and all damages, cost and expenses associated with such
intention and manipulation.
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Version:A.004