SYNC-POWER SPP4403S8RG

SPP4403
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP4403 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
-20V/-10.0A,RDS(ON)= 20mΩ@VGS=-4.5V
‹
-20V/-8.6 A,RDS(ON)= 25mΩ@VGS=-2.5V
‹
-20V/-7.6 A,RDS(ON)= 35mΩ@VGS=-1.8V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOP-8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2008/01/10 Ver.1
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SPP4403
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S
Source
2
S
Source
3
S
Source
4
G
5
D
Gate
Drain
6
D
Drain
7
D
Drain
8
D
Drain
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPP4403S8RG
SOP- 8P
SPP4403
SPP4403S8TG
SOP- 8P
SPP4403
※ SPP4403S8RG : 13” Tape Reel ; Pb – Free
※ SPP4403S8TG : Tube ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
-10.0
-8.0
A
IDM
-30
A
IS
-2.3
A
PD
2.8
1.8
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
70
℃/W
2008/01/10 Ver.1
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SPP4403
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
-0.35
-0.9
VDS=0V,VGS=±12V
VDS=-16V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VGS=- 4.5V,ID=-10.0A
RDS(on) VGS=- 2.5V,ID=-8.6A
VGS=- 1.8V,ID=-7.6A
gfs
VDS=-5.0V,ID=-10.0A
VSD
-20
IS=-2.5A,VGS=0V
±100
-1
-10
-20
V
nA
uA
A
0.016
0.020
0.028
36
0.020
0.025
0.035
-0.8
-1.2
30
45
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
480
td(on)
25
40
45
70
145
240
70
115
Turn-On Time
Turn-Off Time
2008/01/10 Ver.1
tr
td(off)
tf
VDS=-10V,VGS=-5.0V
ID≡-10.0A
nC
4.5
8.0
VDS=-10V,VGS=0V
f=1MHz
VDD=-10V,RL=15Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
2670
pF
520
ns
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SPP4403
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/01/10 Ver.1
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SPP4403
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/01/10 Ver.1
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SPP4403
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/01/10 Ver.1
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SPP4403
P-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE
2008/01/10 Ver.1
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SPP4403
P-Channel Enhancement Mode MOSFET
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mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2008/01/10 Ver.1
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