SYNC-POWER SPN6335_10

SPN6335
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6335 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
35YW
2010/11/18 Ver.3
Page 1
SPN6335
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S1
Source 1
2
G1
3
D2
Gate 1
Drain 2
4
S2
Source 2
5
G2
6
D1
Gate 2
Drain1
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPN6335S36RG
SOT-363
35YW
SPN6335S36RGB
SOT-363
35YW
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN6335S36RG : Tape Reel ; Pb – Free
※ SPN6335S36RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=80℃
Pulsed Drain Current
IDM
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
2010/11/18 Ver.3
ID
TA=25℃
TA=70℃
IS
PD
TJ
TSTG
1.2
0.9
4
0.6
0.35
0.19
-55/150
-55/150
A
A
A
W
℃
℃
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SPN6335
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
20
0.35
1.0
VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
VDS= 20V,VGS=0V
TJ=55℃
VDS≥ 4.5V,VGS =5V
VGS=4.5V,ID=0.95A
RDS(on) VGS=2.5V,ID=0.75A
VGS=1.8V,ID=0.65A
gfs
VDS=10V,ID=0.4A
100
1
5
0.7
V
nA
uA
A
0.26
0.32
0.42
1.0
0.38
0.45
0.80
Ω
S
VSD
IS=0.15A,VGS=0V
0.8
1.2
Total Gate Charge
Qg
1.2
1.5
Gate-Source Charge
Qgs
VDS=10V,VGS=4.5V,
ID≡0.6A
Gate-Drain Charge
Qgd
V
Dynamic
Turn-On Time
Turn-Off Time
2010/11/18 Ver.3
td(on)
tr
td(off)
tf
nC
0.2
0.3
VDD=10V,RL=10Ω ,
ID≡0.5A
VGEN=4.5V ,RG=6Ω
5
10
8
15
10
18
1.2
2.8
ns
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SPN6335
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/11/18 Ver.3
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SPN6335
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/11/18 Ver.3
Page 5
SPN6335
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/11/18 Ver.3
Page 6
SPN6335
Dual N-Channel Enhancement Mode MOSFET
SOT-363 PACKAGE OUTLINE
2010/11/18 Ver.3
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SPN6335
Dual N-Channel Enhancement Mode MOSFET
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
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©http://www.syncpower.com
2010/11/18 Ver.3
Page 8