SFP50N06
Silicon N-Channel MOSFET
Features
�
RDS(on)(Max 22mΩ)@VGS=10V
�
Ultra-low Gate Charge(Typical 31nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's trench Layout
-based process .This technology mproves the performances
Compared with standard parts form various sources.All of these
power MOSFETs are designed for applications in switching
regulators , switching convertors, motor and relay drivers ,and
drivers
for high power bipolar switching transistors demanding
high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
60
V
Continuous Drain Current(@Tc=25℃)
50
A
Continuous Drain Current(@Tc=100℃)
38
A
200
A
± 25
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
480
mJ
EAR
Repetitive Avalanche Energy
(Note1)
13
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.8
V/ ns
Total Power Dissipation(@Tc=25℃)
130
W
Derating Factor above 25℃
1.3
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
RQJC
RQCS
RQJA
Parameter
Thermal Resistance , Junction -to -Case
Case-to-Sink,Flat, Greased Surface
Thermal Resistance , Junction-to -Ambient
Value
Units
Min
Typ
Max
-
-
0.96
℃/W
-
0.5
-
℃/W
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
SFP50N06
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±20
-
-
V
VDS=60V,VGS=0V
-
-
1
µA
VDS=60V,Tc=125℃
-
-
250
µA
V(BR)DSS
ID=250 µA,VGS=0V
60
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=25A
-
20
22
mΩ
Forward Transconductance
gfs
VDS=25V,ID=25A
-
22
-
S
Input capacitance
Ciss
VDS=25V,
-
1180
1540
Reverse transfer capacitance
Crss
VGS=0V,
-
440
580
Output capacitance
Coss
f=1MHz
-
65
90
tr
VDD=30V,
-
15
40
ton
ID=25A，
-
105
220
tf
RG=25Ω，
-
60
130
-
65
140
-
31
41
-
8
-
-
13
-
Min
Type
Max
Unit
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
IDSS
Rise time
Turn-on time
Switching time
pF
ns
Fall time
Turn-off time
toff
Total gate charge(gate-source
VGS=10V
(Note4,5)
VDD=48V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=50A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
50
A
Pulse drain reverse current
IDRP
-
-
-
200
A
Forward voltage(diode)
VDSF
IDR=50A,VGS=0V
-
-
1.5
V
Reverse recovery time
trr
IDR=50A,VGS=0V,
-
52
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
75
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.5mH IAS=50A,VDD=25V,VGS=10V ,Starting TJ=25℃
3.ISD≤50A,di/dt≤380A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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SFP50N06
Fig.1 Transfer characteristics
Fig.3 Typical Capacitance vs
Drain Current
Fig.2 On -state Characteristics
Fig.4 On -resistance Variation vs
Drain current and gate Voltage
Fig.5 On- resistance variation vs
Fig.6 Gate charge Characteristics
Junction Temperature
3/7
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SFP50N06
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
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SFP50N06
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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SFP50N06
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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SFP50N06
TO-220 Package Dimension
Unit:mm
7/7
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