MICROSEMI 1N6772

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/645
DEVICES
LEVELS
1N6772
1N6773
1N6772R
1N6773R
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Symbol
Value
Unit
VRWM
400
600
Vdc
IF
8
Adc
Peak Surge Forward Current
IFSM
60
A(pk)
Thermal Resistance - Junction to Case
Rθjc
2.5
°C/W
1N6772, R
1N6773, R
Peak Repetitive Reverse Voltage
ID = 5µAdc
Average Forward Current (1)
TC = +100°C
TO-257
Note:
(1) Derate linearly @ 160mA/°C above TC = 100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Breakdown Voltage (2)
1N6772, R
1N6773, R
Forward Voltage
IF = 4Adc (2)
IF = 8Adc (2)
Symbol
Min.
VBR
400
600
Max.
Unit
Vdc
VF1
VF2
1.45
1.60
Vdc
10
µAdc
Reverse Leakage Current
VR = 320V (2)
VR = 480V (2)
1N6772, R
1N6773, R
IR1
Reverse Leakage Current
VR = 320V (2), TC = +100°C
VR = 480V (2), TC = +100°C
1N6772, R
1N6773, R
IR2
500
µAdc
Reverse Recovery Time
IF = 1A, di/dt = 50A/µs
trr
60
nS
Junction Capacitance
VR = 5Vdc, f = 1.0MHz
CJ
200
pF
•1
•2
•3
•1
•2
•3
Note:
(2) Pulse Test; 300µS, duty cycle ≤ 2%
T4-LDS-0018 Rev. 1 (072044)
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