APT5010JLLU2 ISOTOP® Boost chopper MOSFET Power Module K D S K Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Very rugged · Low profile D G Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction · Brake switch Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · ISOTOP® Package (SOT-227) · Very low stray inductance · High level of integration G S VDSS = 500V RDSon = 100mW max @ Tj = 25°C ID = 41A @ Tc = 25°C ISOTOPÒ Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS IFAV IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 500 41 30 164 ±30 100 378 41 50 1600 30 39 Unit V A V mW W A mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APT5010JLLU2 – Rev 0 April, 2004 Symbol VDSS APT5010JLLU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 250µA Min 500 Typ Tj = 25°C Tj = 125°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V 3 Max Unit V 100 500 100 5 ±100 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 41A @ TJ=25°C Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Eon Eoff Eon Eoff Fall Time Turn-on Switching Energy u Turn-off Switching Energy Turn-on Switching Energy u Turn-off Switching Energy Min Typ 4360 894 60 96 pF nC 24 49 Resistive switching @ 25°C VGS = 15V VBus = 250V ID = 41A @ TJ=25°C RG = 0.6W Inductive Switching @ 25°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω Inductive Switching @ 125°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω 11 15 25 ns 3 543 µJ 509 843 µJ 593 u Eon includes diode reverse recovery Diode ratings and characteristics VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min Typ 1.6 1.9 1.4 APT website – http://www.advancedpower.com Unit V 250 500 44 Tj = 125°C Max 1.8 µA pF ns A nC ns nC A 2–7 APT5010JLLU2 – Rev 0 April, 2004 Symbol APT5010JLLU2 Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Typ MOSFET Diode Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.33 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g APT website – http://www.advancedpower.com 3–7 APT5010JLLU2 – Rev 0 April, 2004 Typical MOSFET Performance Curve APT website – http://www.advancedpower.com 4–7 APT5010JLLU2 – Rev 0 April, 2004 APT5010JLLU2 APT5010JLLU2 APT website – http://www.advancedpower.com 5–7 APT5010JLLU2 – Rev 0 April, 2004 Typical Diode Performance Curve APT website – http://www.advancedpower.com 6–7 APT5010JLLU2 – Rev 0 April, 2004 APT5010JLLU2 APT5010JLLU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate ISOTOP® is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APT5010JLLU2 – Rev 0 April, 2004 Dimensions in Millimeters and (Inches)