AOSMD AO4915

AOS Semiconductor
Product Reliability Report
AO4915/AO4915L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Sep 12, 2005
This AOS product reliability report summarizes the qualification result for AO4915.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO4915
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
Absolute Maximum Ratings TA=25°C unless otherwise noted
Units
Parameter
Symbol
Drain-Source Voltage
VDS
V
Gate-Source Voltage
VGS
V
Continuous
Drain Current
TA=25°C
A
Max Q2
ID
TA=70°C
Pulsed Drain Current
B
TA=25°C
Power
A
Dissipation
Max Q1
TA=70°C
Junction and Storage
Temperature Range
A
IDM
PD
W
TJ, TSTG
°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous
Drain Current
TA=25°C
A
Units
V
ID
TA=70°C
Pulsed Drain Current
Power
A
Dissipation
Max Schottky
B
TA=25°C
TA=70°C
Junction and Storage
Temperature Range
IDM
A
PD
W
TJ, TSTG
°C
Thermal Characteristics : n-channel , p-channel and schottky
Parameter
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Symbol
t ≤ 10s
SteadyState
SteadyState
t ≤ 10s
SteadyState
SteadyState
t ≤ 10s
SteadyState
SteadyState
RθJA
RθJL
RθJA
RθJL
RθJA
RθJL
Device
Typ
Max
n-ch
48
62.5
n-ch
74
110
n-ch
35
40
p-ch
48
62.5
p-ch
74
110
p-ch
35
40
schottky
47.5
62.5
schottky
71
110
schottky
32
40
Units
°C/W
°C/W
°C/W
II. Package Information:
AO4915
Standard sub-micron
low voltage P channel process
Package Type
8 lead SOIC
Lead Frame
Copper with Solder Plate
Die Attach
Silver epoxy
Bond wire
2 mils Au wire
Mold Material
Epoxy resin with silica filler
Filler % (Spherical/Flake) 90/10
Flammability Rating
UL-94 V-0
Backside Metallization Ti / Ni / Ag
Moisture Level
Up to Level 1 *
Process
AO4915 (Green Compound)
Standard sub-micron
low voltage P channel process
8 lead SOIC
Copper with Solder Plate
Silver epoxy
2 mils Au wire
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4915 (Standard) & AO4915L (Green)
Test Item
Test Condition
Time Point
Solder Reflow
Precondition
Normal: 1hr PCT+3
cycle IR [email protected]
℃
(260℃
℃ for Green)
0hr
HTGB
Temp = 150 C,
Vgs=100% of Vgsmax
168 / 500
hrs
1000 hrs
HTRB
Temp = 150 C, Vds=80%
of Vdsmax
Lot Attribution
Normal: 81 lots
Green: 23 lots
Pressure Pot
130 +/- 2 C, 85%, 33.3
psi, Vgs = 80% of Vgs
max
121 C, 15+/-1 PSIG,
RH=100%
Number of
Failures
14410 pcs
0
246 pcs
0
(Note B**)
(Note A*)
168 / 500
hrs
1000 hrs
100 hrs
77+5 pcs / lot
246 pcs
(Note A*)
HAST
Total Sample
size
Normal: 52 lots
Green: 16 lots
0
77+5 pcs / lot
3740 pcs
0
50+5 pcs / lot
96 hrs
(Note B**)
Normal: 70 lots
Green: 20 lots
4950 pcs
0
50+5 pcs / lot
Temperature
Cycle
-65 to 150 deg C, air to
air, 0.5hr per cycle
250 / 500
cycles
(Note B**)
Normal: 81 lots
Green: 23 lots
5720 pcs
0
50+5 pcs / lot
(Note B**)
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150C bake
150C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
230C
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AO4915 and
AO4915L burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4915L comes
from the AOS generic green compound package qualification data.
IV. Reliability Evaluation
FIT rate (per billion):
MTTF = years
500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at
55 deg C operating conditions (by applying the Arrhenius equation with an activation energy
of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the
necessary failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO4915). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
7
MTBF = 10 / FIT = x 10 hrs = years
/ [2 (164) (168) (258)] =
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C)
Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
258
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltznan’s constant, 8.617164 X 10E-5V / K
130 deg C
150 deg C
2.59
1
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D