SI3311-H Semiconductor IRED Features • • • • Colorless transparency lens type φ3mm(T-1) all plastic mold type Low power consumption High radiant intensity Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE 3.0±0.2 3.0±0.2 4.0±0.2 4.0±0.2 5.0±0.2 5.0±0.2 5.5±0.2 0.5 25.0 MIN 0.5 25.0 MIN 1.0 MIN 1.0 MIN 2.54 NOM 2.54 NOM 12 12 3.8±0.2 3.8±0.2 KLI-8001-001 PIN Connections 1.Anode 2.Cathode 1 SI3311-H Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 150 mW Forward Current IF 100 mA IFP 1 A Reverse Voltage VR 4 V Operating Temperature Topr -25～85 ℃ Storage Temperature Tstg -30～100 ℃ Tsol 260℃ for 5 seconds *1Peak Forward Current 2 * Soldering Temperature *1.Duty ratio = 1/16, Pulse width = 0.1ms *2. Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Symbol Test Condition Min Typ Max Unit Forward Voltage VF IF= 50mA - 1.3 1.7 V Radiant Intensity IE IF= 50mA 12 25 - mW/Sr Peak Wavelength λP Δλ IR IF= 50mA - 950 - nm IF= 50mA - 50 - nm VR=4V - - 10 uA θ /2 IF= 50mA - ±17 - deg Spectrum Bandwidth Reverse Current 3 * Half angle 1 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-8001-001 2 SI3311-H Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Fig. 3 IF – Ta Current IF [mA] Forward Relative Intensity [%] Current IF [mA] Fig.4 Spectrum Distribution Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLI-8001-001 3