ASDL-6771 High Sensitivity Silicon NPN Phototransistor in Side Look Package Data Sheet Description Features ASDL-6771 is a silicon phototransistor encapsulated in red Side Look package. It has high sensitivity, low dark current and a wide spectral response. Collector is denoted by a flat on the packaging diagram and the shorter of the two leads. This device matches with infrared emitter ASDL4772 and is ideal for low cost, high volume applications. • Side Look Package • Wide spectral response • High Sensitivity • High Precision • Low Dark Current • Narrow Viewing Angle • Low Cost • Lead Free & ROHS Compliant Applications • Detector in Consumer Electronics • Detector Industrial Electronics & Equipment • Coin counters • Position sensing • IR Data Communication • Photo Interrupter Ordering Information Part Number Lead Form Color Packaging Shipping Option ASDL-6771-C22 ASDL-6771-C41 Straight Clear Tape & Reel Bulk 4000pcs 20Kpcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Lead spacing is measured where leads emerge from package 4. Specifications are subject to change without notice. Absolute Maximum Ratings at TA=25°C Parameter Symbol Power Dissipation Collector Emitter Voltage Max Unit PDISS 100 mW VCEO 30 V Emitter Collector Voltage VECo 5 V Operating Temperature TO -40 85 °C Storage Temperature TS -55 100 °C Junction temperature TJ 110 °C Lead Soldering Temperature [ .6mm (0.063”) From Body ] Min. 260°C for 5 seconds Electrical Characteristics at 25°C Parameter Symbol Min. Typ. Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Collector Breakdown Voltage V(BR)ECO Collector Emitter Saturation Voltage VCE(SAT) 0.1 Collector Dark Current ICEO 0.1 Thermal Resistance, Junction to Pin RqJP 350 Max. Unit Condition 30 V Ic= 1mA Ee = 0mW/cm2 5 V Ie = 100µA Ee = 0mW/cm2 0.4 V Ic = 100µA Ee = 1mW/cm2 100 nA VCE=10V Ee=0mW/cm2 °C/W Optical Characteristics at 25°C Parameter Symbol Min. Viewing Angle 2θ1/2 30 Deg Wavelength of Peak sensitivity λPK 900 nm Spectral BandWidth Δλ Rise Time tr 20 µs VCC = 5V IC = 1mA RL = 1KΩ Fall Time tf 20 µs VCC = 5V IC = 1mA RL = 1KΩ On State Collector Current IC(ON) mA VCE = 5V Ee = 1mW/cm2 λ = 940nm 400 1.2 Typ. 900 Max. 1100 5 Unit Condition nm Iceo-Collector Dark Current- A Collector Power Dissipation Pc(mW) Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) 100 10 1 0.1 0.01 0 40 0 80 120 120 100 80 60 40 20 0 -40 -20 Ta-Ambient Temperature- C Vcc=5V VRL=1V F =100Hz PW =1ms 0 2 6 4 8 Relative Sensitivity 10 o 20 3.0 2.0 1.0 0 1 2 o 1.0 40 o 0.9 50 o 0.8 60 o 0.7 70 o 80 o 90 o 0.1 0.2 0.4 0.6 FIGURE 5. SENSITIVITY DIAGRAM For product information and a complete list of distributors, please go to our web site: 5 4 2 FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE o 30 0.5 0.3 3 Ee-Irradiance-mW/cm FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE o Vce= 5V 4.0 0 10 RL-Load Resistance-K 0 20 40 60 80 100 FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE Relative Collector Current Tr Tf-Rise and Fall Time- s FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 180 160 140 120 100 80 60 40 20 0 0 Ta-Ambient Temperature- o C o www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0015EN - January 22, 2007