LITEON ASDL-4770

ASDL-4770
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
Data Sheet
Description
Features
ASDL-4770 is a high performance Infrared emitter that
utilizes AlGaAs on GaAs LED technology. It is optimized
for high efficiency at emission wavelength of 940nm
and is designed for applications that require high radiant
intensity, low forward voltage at wide viewing angle.
The emitter is encapsulated in Side Look package with
spherical side view lens and is matched to ASDL-6770 for
maximum sensitivity.
• Side Look Package
• 940nm wavelength
• Low Forward Voltage
• Narrow Viewing Angle
• Good Mechanical and Spectral matching to ASDL-6770
Infrared Phototransistor Detector
• Lead Free and ROHS Compliant
• Available in Tape & Reel
Applications
• Industrial Infrared Monitoring Applications
• Consumer Electronics (Optical Mouse)
• Infrared Source for Optical Counters and Card Readers
• Photo-Interrupters
• On-Off Switch / Beam Interruption
• Light Barriers
Ordering Information
Part Number
Lead Form
Color
Packaging
Shipping Option
ASDL-4770-C22
ASDL-4770-C41
Straight
Clear
Tape & Reel
Bulk
4000pcs
20Kpcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protruded resin under flange is 1.0mm (.039”) max
4. Lead spacing is measured where leads emerge from package
5. Specifications are subject to change without notice
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Peak Forward Current
Continuous Forward Current
Min.
Max
Unit
Reference
IFPK
1
A
300pps
IFDC
50
mA
Power Dissipation
PDISS
75
mW
Reverse Voltage
VR
5
V
Operating Temperature
TO
-40
85
°C
Storage Temperature
TS
-55
100
°C
LED Junction Temperature
TJ
110
°C
260 °C for 5 sec
Lead Soldering Temperature
Electrical Characteristics at 25°C
Parameter
Symbol
Forward Voltage
VF
Reverse Voltage
VR
Thermal Resistance,
Junction to Ambient
RqJA
Min.
Typ.
Max.
Unit
Condition
1.2
1.6
V
IFDC=20mA
V
IR=100uA
5
°C/W
350
Optical Characteristics at 25°C
Parameter
Symbol
Min.
Radiant On-Axis Intensity
IE
1
Typ.
Max.
Unit
Condition
2.2
mW/Sr
IFDC=20mA
Viewing Angle
2θ1/2
40
deg
Peak wavelength
λPK
940
nm
IFDC = 20mA
Spectral Width
Δλ
50
nm
IFDC = 20mA
Optical Rise Time
tr
1
us
IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Optical Fall Time
tf
1
us
IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated)
60
Forward Current IF (mA)
Relative Radiant Intensity
1.0
0.5
0
840
940
50
40
30
20
10
0
1040
-40 -20 0
Wavelength (nm)
Ambient Temperature Ta ( o C)
Figure 1. SPECTRAL DISTRIBUTION
Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE
1.2
Output Power Relative To
Value at IF=20mA
Forward Current (mA)
50
40
30
20
10
0
0
1.2
1.6
2.0
2.4
1.0
0.8
0.6
0.4
0.2
0
2.8
0
20
0
Relative Radiant Intensity
4.0
3.0
2.0
1.0
20
40
60
80
60
80
Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE
5.0
0
40
o
Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE
Output Power Relative To
Value at IF=20mA
-20
Ambient Temperature Ta ( C)
Forward Voltage (V)
0
20 40 60 80 100
100
o
Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved.
o
40
o
1.0
0.9
50
o
0.8
60
o
0.7
70
80
90
o
Figure 6. RADIATION DIAGRAM
http://optodatabook.liteon.com/databook/databook.aspx
20
o
0.5 0.3 0.1
For company and product information, please go to our web site: WWW.liteon.com or
o
30
Foward Current (mA)
Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT
10
0.2 0.4 0.6
o
o