PRELIMINARY PRODUCT INFORMATION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION T he P C 3237T K is a silicon germanium (S iG e) monolithic integrated circuit des igned as low nois e amplifier for the mobile digital T V etc. T his device exhibits low nois e figure and high power gain characteristics. T he package is 6-pin lead-les s minimold, s uitable for s urface mount. T his IC is manufactured using our UHS 2 (Ultra High S peed P roces s ) S iG e bipolar proces s . FEATURES • S upply voltage : V C C = 2.4 to 3.3 V (2.8 V T Y P .) • Low current cons umption : I C C = 5 mA T Y P. @ V C C = 2.8 V • Low nois e : NF = 1.4 dB T Y P . @ f = 470 MHz NF = 1.5 dB T Y P . @ f = 770 MHz • P ower gain : G P = 15.3 dB T Y P. @ f = 470 MHz G P = 13.5 dB T Y P . @ f = 770 MHz • High-dens ity surface mounting : 6-pin lead-les s minimold package (1.5 1.1 0.55 mm) APPLICATION • Low nois e amplifier forthe mobile digital T V etc. ORDERING INFORMATION P art Number Order Number P C 3237T K -E 2 P C 3237T K -E 2-A P ackage 6-pin lead-les s minimold (1511 P K G ) (P b-F ree) Marking 6N S upplying F orm • 8 mm wide embos s ed taping • P in 1, 6 face the perforation s ide of the tape • Qty 5 kpcs /reel Remark T o order evaluation s amples , contact your nearby s ales office. P art number for sample order: P C 3237T K-A Caution Observe precautions when handling because these devices are sensitive to electrostaic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. (WK edition) Date P ublis hed Ma y 2007 N S C P (N) NEC Electronics Corporation 2007 PC3237TK PIN CONNECTIONS ( Top View ) 6N 㻧㻶 1 2 3 ( Top View ) ( Bottom View ) P in No. P in Name 1 NC 6 1 6 6 1 2 G ND 5 2 5 5 2 3 INP UT 4 3 4 4 3 4 VCC 5 G ND 6 OUT P UT ABSOLUTE MAXIMUM RATINGS P arameter S ymbol T es t C onditions R atings Unit S upply V oltage VCC T A = +25 C 3.6 V C ircuit C urrent IC C T A = +25 C 10 mA P ower Dis s ipation PD T A = +85°C 203 mW Operating Ambient T emperature TA 40 to +85 C S torage T emperature T s tg 55 to +150 C Input P ower P in +8 dB m Note Mounted on double-s ide copper-clad 50 50 Note 1.6 mm epoxy glas s PW B RECOMMENDED OPERATING RANGE P arameter S ymbol MIN. T YP . MAX. Unit S upply V oltage VCC 2.4 2.8 3.3 V Operating Ambient T emperature TA 40 +25 +85 C 2 PC3237TK ELECTRICAL CHARACTERISTICS ( T A = +25 C, VCC = 2.8 V, ZS = ZL= 50Ȑ, unless otherwise specified ) P arameter S ymbol T es t C onditions MIN. T YP . MAX. Unit C ircuit C urrent IC C No S ignal 3.5 5 7 mA P ower G ain G P1 f = 470MHz, P in = 㸢30 dB m 13.0 15.3 17.5 dB G P2 f = 770MHz, P in = 㸢30 dB m 11.0 13.5 16.0 dB NF 1 f = 470MHz 㸢 1.4 1.9 dB NF 2 f = 770MHz 㸢 1.5 2.0 dB R L in1 f = 470MHz, P in = 㸢30 dB m 6.5 9.5 㸢 dB R L in2 f = 770MHz, P in = 㸢30 dB m 5.5 8.5 㸢 dB R L out1 f = 470MHz, P in = 㸢30 dB m 9 14 㸢 dB R L out2 f = 770MHz, P in = 㸢30 dB m 10 15 㸢 dB IS L 1 f = 470MHz, P in = 㸢30 dB m 17 22 㸢 dB IS L 2 f = 770MHz, P in = 㸢30 dB m 16 21 㸢 dB P O (1 dB ) 1 f = 470MHz 㸢8 㸢5.5 㸢 dB m P O (1 dB ) 2 f = 770MHz 㸢8 㸢5.5 㸢 dB m Nois e F igure Input R eturn L os s O utput R eturn L os s Is olation G ain 1 dB C ompres s ion Output P ower TEST CIRCUIT C2 50䂿 INP UT 䕸 1 6 2 5 3 4 C1 50䂿 䕸 OUT P UT C4 䕵 VCC C3 COMPONENTS LIST S ymbol T ype Value C 1, C 2 C hip C apacitor 100pF C3 C hip C apacitor 1000pF C4 F eed-through C apacitor 1000pF 3 PC3237TK STANDARD CHARACTERISTICS FOR REFERENCE ( T A =㸠25 C, VCC = 2.8 V, ZS = ZL = 50Ȑ, unless otherwise specified ) P arameter S aturated Output P ower S ymbol T es t C onditions R eference Unit P O (s at) 1 f = 470MHz, P in = 2 dB m 1.3 dB m P O (s at) 2 f = 770MHz, P in = 2 dB m 1.3 dB m Input 3rd Order Dis tortion IIP 3 1 f1=470MHz, f2=471MHz 㸢10.5 dB m Intercept P oint IIP 3 2 f1=770MHz, f2=771MHz 㸢9.5 dB m Output 3rd Order Dis tortion OIP 3 1 f1=470MHz, f2=471MHz 4.8 dB m Intercept P oint OIP 3 2 f1=770MHz, f2=771MHz 4.0 dB m K1 f = 470MHz 1.15 㸢 K2 f = 770MHz 1.20 㸢 K factor PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm) 4 PC3237TK NOTES ON CORRECT USE (1) O bs erve precautions for handling becaus e of electro-s tatic s ens itive devices . (2) F orm a ground pattern as widely as pos s ible to minimize ground impedance (to prevent undes ired os cillation). All the ground terminals mus t be connected together with wide ground pattern to decreas e impedance difference. (3) T he bypas s capacitor should be attached to V C C line. (4) T he DC cut capacitor s hould be attached to Input and O utput pin. (5) P in 1 (NC ) s hould be connected to the ground pattern. RECOMMENDED SOLDERING CONDITIONS T his product s hould be s oldered and mounted under the following recommended conditions . F or s oldering methods and conditions other than thos e recommended below, contact your nearby s ales office. S oldering Method Infrared R eflow W ave S oldering S oldering C onditions C ondition S ymbol P eak temperature (package s urface temperature) : 260 C or below T ime at peak temperature : 10 s econds or les s T ime at temperature of 220 C or higher : 60 s econds or les s P reheating time at 120 to 180 C : 120 30 s econds Maximum number of reflow proces s es : 3 times Maximum chlorine content of ros in flux (% mas s ) : 0.2% (W t.) or below P eak temperature (molten s older temperature) : 260 C or below T ime at peak temperature : 10 s econds or les s IR 260 W S 260 P reheating temperature (package s urface temperature) : 120 C or below P artial H eating Maximum number of flow proces s es : 1 time Maximum chlorine content of ros in flux (% mas s ) : 0.2% (W t.) or below P eak temperature (terminal temperature) : 350 C or below S oldering time (per s ide of device) : 3 s econds or les s Maximum chlorine content of ros in flux (% mas s ) : 0.2% (W t.) or below HS 350 Caution Do not use different soldering methods together (except for partial heating). 5 PC3237TK 6 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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