CEM4487 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.2A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -40 Units V Gate-Source Voltage VGS ±20 V ID -4.2 A IDM -17 A PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1. 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CEM4487 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -40V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -4.2A -1 55 66 mΩ VGS = -4.5V, ID = -3.3A 85 105 mΩ VDS = -5V, ID = -4.2A 7 S 695 pF 115 pF 65 pF Dynamic Characteristics c Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -20V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 14 28 ns 2.8 4.6 ns 30.2 60.4 ns Turn-Off Fall Time tf 4.2 8.4 ns Total Gate Charge Qg 5.2 6.9 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -20V, ID = -4.2A, VGS = -4.5V 2 nC 2.6 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -4.2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 -4.2 A -1.2 V CEM4487 P-CHANNEL 10 -VGS=10,8V 20 -VGS=5.0V 15 10 8 -ID, Drain Current (A) -ID, Drain Current (A) 25 -VGS=4.0V 5 6 4 25 C 2 TJ=125 C 0 0 0.5 1 1.5 2 0 2.5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 Coss 150 Crss 0 5 10 15 20 25 5 2.2 1.9 ID=-4.2A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 2. Transfer Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 1. Output Characteristics 600 1.2 2 -VGS, Gate-to-Source Voltage (V) 750 1.3 1 -VDS, Drain-to-Source Voltage (V) 900 0 0 -55 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 10 VDS=-20V ID=-4.2A 4 3 2 1 0 0 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM4487 1.2 2.4 3.6 4.8 6 10 1 10 0 10 -1 10 -2 1ms 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D td(off) tf 90% 90% VOUT VGS RGEN toff tr td(on) VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 0.02 10 Single Pulse -2 10 -4 10 -3 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2