DC COMPONENTS CO., LTD. R DXTA92 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Total Power Dissipation PD 1 W Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) 1 .020(0.51) .014(0.36) 2 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -300 - - V IC=-100µA Collector-Emitter Breakdown Voltage BVCEO -300 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICBO - - -250 nA VCB=-200V Collector Cutoff Current Emitter Cutoff Current Test Conditions IEBO - - -100 nA VEB=-3V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.5 V IC=-20mA, IB=-2mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -0.9 V IC=-20mA, IB=-2mA DC Current Gain(1) hFE1 25 - - - IC=-1mA, VCE=-10V hFE2 40 - - - IC=-10mA, VCE=-10V hFE3 25 - - - Transition Frequency fT 50 - - MHz Output Capacitance Cob - - 6 pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% IC=-30mA, VCE=-10V VCE=-20V, IC=-10mA, f=100MHz VCB=-20V