FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition Rating VDS 32 VGS Tc=25 oC -3 Pt 125 Tstg -65 to +175 200 Tch Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition Limit RG=2 Ω RG=2 Ω <28 <352 >-31 155 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Vp VDS=5V, IDS=150mA Gate-Source Breakdown Voltage VGSO IGS=-1.5mA 3rd Order Inter modulation Distortion IM3 VDS=28V Power Gain Gp IDS(DC)=700mA Drain Efficiency ηd Pout=43dBm(Avg.) Adjacent Channel Leakage Power Ratio ACLR Thermal Resistance note Channel to Case Rth -0.1 1 -0.2 -0.5 -5 Unit V V - -35 -30 dBc 14.0 15.0 - dB - 26 - % - -36 - - Note 1 : IM3 ACLR and Gain test condition as follows: IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz. ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at fo+/5MHz. Edition 1.2 Mar 2004 Limit Typ. Max. 1.1 1.2 dBc oC /W FLL21E090IK High Voltage - High Power GaAs FET Output Power [dBm] Output Power [dBm] 51 49 47 45 43 41 39 37 35 33 31 2 2.05 2.1 2.15 2.2 2.25 2.3 50 90 48 80 46 70 44 60 42 50 40 40 38 30 36 20 34 10 32 Frequency [GHz] Drain Efficiency [%] Output Power , Drain Efficiency vs. Input Power @VDS=28V, IDS=700ｍA, f=2.14GHz Output Power vs. Frequency @VDS=28V, IDS=700ｍA 0 18 20 22 24 26 28 30 32 34 36 38 40 Pin=20dBm Pin=24dBm Pin=28dBm Pin=32dBm Pin=36dBm P1dB Input Pow er [dBm ] Pout Drain Efficiency 35 -25 35 -30 30 -30 30 -35 25 -35 25 -40 20 -40 20 -45 15 -45 15 -50 10 -50 10 -55 5 -55 5 -60 ACLR [dBc] 0 -60 28 30 32 34 36 38 40 42 44 0 28 30 32 34 36 38 40 42 44 Output Pow er [dBm ] IM3 IM5 Drain Efficiency [%] -25 Drain Efficiency [%] IMD [dBc] Two-Carrier IMD(ACLR)& Drain Efficiency vs. Output Power Single-Carrier ACLR & Drain Efficiency vs. Output Power @VDS=28V IDS=700mA fo=2.1325, f1=2.1475GHz @VDS=28V IDS=700mA fo=2.1325GHz W-CDMA 3-GPP BS-1 64ch Modulation W-CDMA 3GPP BS-1 64ch Modulation Output Pow er [dBm ] Drain Efficiency +/-5MHz 2 +/-10MHz Drain Efficiency FLL21E090IK High Voltage - High Power GaAs FET S-Parameters @VDS=28V, IDS=700mA, f=1.7 to 3 GHz +50j +100j +25j 2.0G H z +10j 2.1 2.0G H z 0 2.2 2.2 2.1 -10j 100Ω 50Ω 25Ω 10Ω -25j -100j -50j +90° 2.2 2.1 2.0GHz 0.3 0.4 -90° Scale for |S 12| 6 ±180° 8 Scale for |S21| !freq(GHzS11(mag S11(ang) S21(mag S21(ang) S12(mag S12(ang) S22(mag S22(ang) 0.1 0.973 175.6 0.958 161.9 0.000 34.8 0.711 -168.4 0.2 0.953 171.7 1.370 136.9 0.001 94.1 0.876 -175.4 0.3 0.934 169.7 1.433 95.6 0.003 50.0 0.931 174.7 0.4 0.932 167.0 1.182 61.6 0.003 12.2 0.922 167.3 0.5 0.940 164.2 0.890 33.5 0.002 3.7 0.908 162.4 +250j 1 0.947 147.8 0.390 -31.8 0.003 18.2 0.928 137.9 1.1 0.952 143.8 0.381 -41.2 0.003 14.1 0.921 132.4 1.2 0.958 139.8 0.394 -50.1 0.004 7.2 0.922 126.4 1.3 0.948 135.8 0.423 -59.3 0.004 7.5 0.921 120.0 ∞ 1.4 0.951 131.5 0.480 -69.3 0.004 13.5 0.910 112.6 1.5 0.952 126.7 0.571 -80.6 0.005 -1.2 0.893 104.1 1.6 0.935 121.3 0.715 -93.2 0.007 -19.0 0.857 94.5 -250j 1.7 0.924 114.9 0.952 -108.0 0.008 -35.4 0.820 83.3 1.8 0.896 107.1 1.356 -126.3 0.010 -48.1 0.776 69.2 1.9 0.866 96.5 2.101 -150.4 0.012 -78.7 0.692 50.7 1.95 0.832 89.8 2.692 -165.2 0.014 -102.2 0.631 38.1 2 0.775 80.9 3.492 176.7 0.016 -121.5 0.553 21.5 S 11 2.05 0.675 67.3 4.599 153.2 0.017 -152.8 0.454 -3.0 S 22 2.1 0.478 46.0 5.845 123.1 0.020 161.6 0.352 -45.7 2.11 0.422 40.4 6.094 115.8 0.020 151.9 0.338 -57.6 2.12 0.360 34.3 6.273 108.9 0.020 141.1 0.327 -70.7 2.13 0.293 27.1 6.451 101.3 0.020 130.2 0.323 -84.5 2.14 0.222 18.7 6.549 93.5 0.020 123.6 0.325 -98.7 2.15 0.149 6.2 6.559 85.9 0.021 111.2 0.333 -112.3 2.16 0.083 -18.5 6.563 78.2 0.020 97.2 0.347 -125.6 2.17 0.052 -87.3 6.512 70.6 0.020 88.0 0.364 -137.7 2.18 0.100 -139.9 6.332 63.2 0.019 72.8 0.385 -148.7 2.19 0.166 -156.8 6.214 56.0 0.020 69.5 0.403 -158.2 2.2 0.228 -166.8 6.005 49.2 0.019 53.5 0.425 -167.4 2.25 0.479 166.4 4.860 18.9 0.016 8.9 0.513 160.9 2.3 0.624 151.2 3.765 -4.5 0.015 -20.0 0.577 141.9 0° 2.35 0.710 141.0 2.960 -22.9 0.015 -45.9 0.626 127.9 2.4 0.764 133.4 2.395 -38.2 0.014 -65.6 0.665 116.9 2.5 0.822 121.6 1.673 -62.5 0.013 -95.6 0.723 98.1 2.6 0.848 112.1 1.293 -83.3 0.011 -118.3 0.767 80.6 2.7 0.858 103.8 1.066 -101.3 0.011 -142.2 0.790 63.4 2.8 0.860 96.0 0.936 -119.0 0.011 -154.2 0.818 45.2 2.9 0.856 88.1 0.866 -137.8 0.012 -174.4 0.825 25.3 3 0.846 78.8 0.849 -157.1 0.012 168.1 0.829 3.5 S 12 S 21 3 FLL21E090IK High Voltage - High Power GaAs FET BOARD LAYOUT <INPUT SIDE> <OUTPUT SIDE> εr=3.5 t=0.6mm 4 FLL21E090IK High Voltage - High Power GaAs FET IK Package Outline Metal-Ceramic Hermetic Package PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm 5 FLL21E090IK High Voltage - High Power GaAs FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 6