FLM5359-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=35%(Typ.) ・Broad Band: 5.3~5.9GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5359-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Symbol VDS Rating 15 Unit Gate-Source Voltage VGS -5 Total Power Dissipation Storage Temperature PT Tstg 115.4 -65 to +175 oC Channel Temperature Tch 175 oC V V W RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C) Item Symbol DC Input Voltage Condition V DS Forward Gate Current IGF RG=13Ω Reverse Gate Current IGR R G=13Ω Limit Unit ≤ 10 V ≤107.2 ≥ -23.2 mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Symbol Test Conditions Limit Typ. 16.0 Drain Current IDSS V DS=5V, V GS =0V Transconductance gm V DS=5V, I DS =8.0A - 8000 - mS Pinch-off Voltage Vp V DS=5V, I DS =960mA -1.0 -2.0 -3.5 V IGS =-960µA Gate-Source Breakdown Voltage V GSO Output Power at 1dB G.C.P . P1dB Power Gain at 1dB G.C.P. G1dB Idsr Drain Current Power-Added Efficiency η add Gain Flatness ∆G Thermal Resistance Rth Channel Temperature Rise ∆ T ch V DS =10V f=5.3 - 5.9 GHz IDS =0.5Idss (Typ.) Zs=ZL =50Ω -5.0 - - V 45.0 45.5 - dBm 8.0 9.0 - dB - 8.5 9.5 A - 35 - % - 1.2 dB Channel to Case - 1.1 1.3 10V X Idsr X Rth - - 100 C/W o C o G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level Class Ⅲ 2000V ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.3 September 2004 A - CASE STYLE: IK ESD Max. 24.0 Unit Min . - 1 FLM5359-35F C-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs INPUT POWER POWER DERATING CURVE Output Power [dBm] 80 60 40 20 100 48 90 46 80 44 70 Pout 42 60 40 50 38 40 P.A.E. 36 30 34 20 32 10 30 0 0 50 100 150 0 24 200 26 28 30 32 34 36 38 Input Power [dBm] Case Temperature [OC] OUTPUT POWER vs FREQUENCY VDS=10V, IDS=0.5 Idss 47 P1dB 46 Output Power [dBm] Total Power Dissipation [W] 100 50 Pin=38dBm 45 36dBm 44 43 34dBm 42 41 32dBm 40 5.2 5.3 5.4 5.5 5.6 5.7 Frequency [GHz] 2 5.8 5.9 6 40 Power Added Efficiency [%] Vds=10V, Ids=0.5Idss, f=5.6GHz 120 FLM5359-35F C-Band Internally Matched FET ■ S-PARAMETER +90° +50j +25j +100j 10Ω 25 5.3G H z +10j +250j 5.9 5.9 0 ∞ ±180° 4 2 Scale for |S21| 0° 5.3GHz 5.6 5.9 -10j 5. 5.3G H z -250j 0.2 5.6 -25j 0.4 -90° -100j -50j 5.3GHz Scale for |S 12| 5.6 5.6 S 11 S 12 S 21 S 22 VDS=10V, IDS=0.5Idss Freq [GHz] 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 S11 MAG ANG 0.55 -176.35 0.51 158.56 0.46 130.78 0.43 100.35 0.40 67.00 0.38 33.18 0.37 -2.60 0.36 -37.11 0.36 -70.87 0.37 -103.18 0.39 -132.38 S21 MAG 2.67 2.90 3.14 3.34 3.48 3.53 3.49 3.33 3.13 2.88 2.64 ANG 21.09 2.47 -16.92 -37.44 -58.64 -80.56 -102.21 -123.77 -144.23 -163.44 178.04 3 S12 MAG 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.10 0.10 0.09 0.09 ANG -14.96 -40.60 -64.94 -86.42 -109.29 -131.37 -153.13 -174.77 164.53 144.50 127.05 S22 MAG ANG 0.60 -94.10 0.55 -108.11 0.49 -124.14 0.42 -142.79 0.33 -165.42 0.25 162.44 0.22 113.75 0.28 68.08 0.38 41.18 0.46 24.47 0.52 12.40 FLM5359-35F C-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM5359-35F C-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5