ETC FLM8596-15F

FLM8596-15F
X-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=7.5dB(Typ.)
・High PAE: ηadd=32%(Typ.)
・Broad Band: 8.5~9.6GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM8596-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
57.7
W
Storage Temperature
Tstg
-65 to +175
oC
Channel Temperature
Tch
175
oC
Recommended Operating Condition(Case Temperature Tc=25OC)
Item
Symbol
Condition
Unit
Limit
≤10
DC Input Voltage
VDS
Gate Current
IGS
RG=50Ω
Gate Current
IGR
RG=50Ω
V
≤16.7
≥-3.62
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC)
Item
Symbol
Test Conditions
Limit
Typ.
7.2
Max.
10.8
Unit
Drain Current
IDSS
VDS=5V, VGS=0V
Min.
-
Transconductance
gm
VDS=5V, IDS=2.4A
-
4500
-
mS
Pinch-off Voltage
Vp
VDS=5V, IDS=240mA
-0.5
-1.5
-3.0
V
Gate-Source Breakdown Voltage
VGSO
IGS=-300µA
-5.0
-
-
V
Output Power at 1dB G.C.P.
P1dB
41.0
42.0
-
dBm
Power Gain at 1dB G.C.P.
G1dB
6.5
7.5
-
dB
-
4.0
5.0
A
-
32
-
%
-
-
1.2
dB
Channel to Case
-
2.3
2.6
10V X Idsr X Rth
-
-
100
Idsr
Drain Current
Power-added Efficiency
ηadd
Gain Flatness
∆G
Thermal Resistance
Rth
Channel Temperature Rise
∆Tch
VDS=10V
f=8.5 - 9.6 GHz
IDS=0.5Idss
Zs=ZL=50Ω
CASE STYLE: IB
ESD
C/W
o
C
o
G.C.P.:Gain Compression Point
Class Ⅲ
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
A
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FLM8596-15F
X-Band Internally Matched FET
OUTPUT POWER & POWER ADDED EFFICIENCY
vs. INPUT POWER
POWER DERATING CURVE
Output Power [dBm]
50
40
30
20
10
44
80
42
70
40
60
38
50
Pout
36
40
34
30
32
20
P.A.E.
30
0
10
0
28
0
50
100
150
200
20
22
24
Case Temperature [ oC]
26
28
30
32
34
36
Input Power [dBm]
OUTPUT POWER vs. FREQUENCY
Vds=10V, Ids=0.5Idss
44
Pout (dBm)
Total Power Dissipation [W]
60
P1dB
42
Pin=36dBm
40
Pin= 32dBm
38
36
Pin= 28dBm
34
32
30
Pin= 22dBm
28
8.2
8.4
8.6
8.8
9.0
9.2
Freq. (GHz)
2
9.4
9.6
9.8
38
Power Added Efficiency [%]
Vds=10V, Ids=0.5Idss, f=9.05GHz
FLM8596-15F
X-Band Internally Matched FET
■ S-PARAMETER
+50j
+90°
+100j
+25j
9.05
+250j
+10j
9.6
9.6
0 8.5G H z
9.6
∞
±180° 4
2
Scale for |S21|
8.5GHz
8.5G H z
9.05
-250j
-10j
0.2
25
10Ω
-25j
9.05
-100j
S 11
-50j
0°
9.6
Scale for |S 12|
9.05
8.5GHz
0.4
-90°
S 22
S 12
S 21
VDS=10V, IDS=0.5Idss
S 11
S 21
S 12
Freq.
GHz
M ag
A ng
M ag
A ng
M ag
A ng
8.4
8.5
8.6
8.7
8.8
8.9
9.0
9.1
9.2
9.3
9.4
9.5
9.6
9.7
0.795
0.777
0.753
0.718
0.682
0.639
0.612
0.569
0.545
0.514
0.499
0.477
0.461
0.445
-169.9
178.3
165.8
154.1
140.5
128.7
114.7
101.1
87.9
73.5
60.2
44.5
29.5
12.7
2.386
2.459
2.524
2.582
2.583
2.562
2.544
2.530
2.503
2.473
2.470
2.464
2.485
2.526
-29.6
-42.2
-55.9
-69.0
-81.7
-94.6
-106.6
-118.4
-129.6
-141.1
-151.8
-162.7
-174.2
174.5
0.031
0.029
0.024
0.024
0.024
0.027
0.031
0.035
0.039
0.044
0.048
0.051
0.054
0.061
47.6
29.9
5.6
-28.6
-55.5
-85.8
-108.8
-132.1
-149.9
-164.7
-178.2
168.8
158.0
145.6
3
S 22
M ag
A ng
0.318
0.268
0.244
0.257
0.298
0.354
0.402
0.439
0.467
0.481
0.494
0.500
0.499
0.496
-127.4
-149.3
-177.6
151.5
126.6
107.8
93.8
83.6
75.2
69.1
64.4
60.7
58.2
55.9
FLM8596-15F
X-Band Internally Matched FET
■ Package Out Line
CASE STYLE: IB
Unit : mm
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
4
FLM8596-15F
X-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
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