FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm (Typ.) •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications band in the 29.5 to 30.0GHz frequency range. This product is well suited for Ka-band V-SAT applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Symbol VDD VGG Pin Tstg Rating 10 -3 21 -55 to +125 Unit V V dBm ℃ RECOMMENDED OPERATING CONDITIONS Item Symbol Drain-Source Voltage VDD Input Power Pin Operating Backside Temperature Top This product should be hermetically packaged. Condition ≦7 ≦18 -40 to +85 Unit V dBm ℃ ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃ ℃) Limits Unit Min. Typ. Max. Frequency Range f VDD=7.0V 29.5 30 GHz Output Power at Pin=15dBm Pout IDD(DC)=1500mA typ. 34.5 35.5 dBm Output Power at 1dB G.C.P. P1dB Zs=Zl=50ohm 35 dBm Linear Gain Gl 20 24 dB Power Added Efficiency at Pin=15dBm Nadd 23 % Drain Current at Pin=15dBm Iddrf 2200 2800 mA Input Return Loss at Pin=-20dBm RLin -8 dB Output Return Loss at Pin=-20dBm RLout -10 dB Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1) G.C.P. : Gain Compression Point Item Symbol Test Conditions Class 0 ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.1 January 2006 1 ~ 199V http://www.eudyna.com/ FMM5820X Ka-Band Power Amplifier MMIC Output Power vs. Frequency Output Power, Drain Current vs. Input Power @VDD=7V, IDD(DC)=1500mA @VDD=7V, IDD(DC)=1500mA 38 36 36 Pin=16dBm 34 P1dB Pin=12dBm 32 Output Power [dBm] Output Power [dBm] 3000 f=29.5GHz 29.75GHz 30.0GHz 30 Pin=8dBm 28 26 Pin=4dBm 24 22 27.5 28 28.5 29 29.5 30 30.5 31 34 2600 32 2400 Pout 30 28 2000 Drain Current 26 1800 1600 22 31.5 1400 -2 Frequency [GHz] 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm] Power Added Efficiency vs. Frequency IMD vs. Output Power @VDD=7V, IDD(DC)=1500mA @VDD=7V, IDD(DC)=1500mA -15 30 f=29.5GHz 29.75GHz 30.0GHz 25 20 Pin=16dBm 15 P1dB Pin=12dBm 10 Pin=8dBm 5 Pin=4dBm Pin=0dBm 0 27 27.5 28 28.5 29 29.5 30 30.5 31 Intermodulation Distortion [dBc] -20 Power Added Effciency [%] 2200 24 Pin=0dBm 20 27 2800 Drain Current [mA] 38 -25 IM3 -30 -35 -40 IM5 -45 -50 -55 -60 20 31.5 21 22 23 24 25 26 27 28 29 30 2-tone Total Output Power [dBm] Frequency [GHz] 2 31 32 33 34 FMM5820X Ka-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Drain Current vs. Input Power by Drain Voltage @f=29.5GHz, IDD(DC)=1500mA @f=29.75GHz, IDD(DC)=1500mA 36 2600 34 Pout 32 2400 30 2200 28 2000 26 1800 Drain Current 24 22 -2 0 2 4 6 8 10 12 14 16 18 VDD=5V 6V 7V 8V 2600 Pout 32 2200 28 2000 26 1800 1600 24 1400 22 20 Drain Current 1600 1400 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm] Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Gain vs. Drain Voltage @IDD(DC)=1500mA @f=30.0GHz, IDD(DC)=1500mA 38 3000 38 VDD=5V 6V 7V 8V 2800 32 f=29.5GHz 29.75GHz 30GHz 36 30 2400 Pout 30 2200 28 2000 26 1800 Drain Current 24 34 P1dB [dBm] 32 Drain Current [mA] 2600 34 Output Power [dBm] 2400 30 Input Power [dBm] 36 2800 -2 0 2 4 6 8 10 12 14 16 18 26 30 24 G1dB 22 20 26 1400 22 32 28 1600 28 P1dB 4 20 Input Power [dBm] 5 6 7 Drain Voltage VDD [V] 3 8 9 G1dB [dB] Output Power [dBm] 34 2800 Output Power [dBm] 36 3000 38 Drain Current [mA] VDD=5V 6V 7V 8V Drain Current [mA] 3000 38 FMM5820X Ka-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Current Output Power, Drain Current vs. Input Power by Drain Current @f=29.5GHz, VDD=7V @f=29.75GHz, VDD=7V 4200 32 36 3400 34 3000 Pout 30 2600 28 2200 26 1800 Drain Current 24 22 -2 0 2 4 6 8 10 12 14 16 18 4200 IDD(DC)=1300mA 1500mA 1700mA 1900mA 3400 Pout 32 2600 28 2200 26 1400 24 1000 22 1400 1000 -2 20 0 2 4 8 3800 36 30 2600 28 2200 26 1800 Drain Current 12 14 16 18 P1dB 28 32 26 G1dB 24 28 26 1100 1000 22 10 20 30 30 1400 24 8 18 32 34 P1dB [dBm] 3000 Drain Current [mA] Pout 6 16 f=29.5GHz 29.75GHz 30GHz 3400 34 4 14 38 4200 2 12 @VDD=7V IDD(DC)=1300mA 1500mA 1700mA 1900mA 0 10 Output Power, Gain vs. Drain Current 38 Output Power [dBm] 6 Input Power [dBm] @f=30.0GHz, VDD=7V -2 1800 Drain Current Output Power, Drain Current vs. Input Power by Drain Current 32 3000 30 Input Power [dBm] 36 3800 20 22 1300 1500 1700 DC Drain Current IDD(DC) [mA] Input Power [dBm] 4 1900 20 2100 G1dB [dB] Output Power [dBm] 34 3800 Output Power [dBm] 36 38 Drain Current [mA] IDD(DC)=1300mA 1500mA 1700mA 1900mA Drain Current [mA] 38 FMM5820X Ka-Band Power Amplifier MMIC IMD vs. Output Power by Drain Voltage IMD vs. Output Power by Drain Voltage @f=29.5GHz, IDD(DC)=1500mA @f=29.75GHz, IDD(DC)=1500mA -15 -15 VDD=5V 6V 7V 8V -25 IM3 -30 -35 -40 -45 -50 IM5 -55 -25 -30 IM3 -35 -40 -45 -50 IM5 -55 -60 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 20 34 IMD vs. Output Power by Drain Voltage @f=30.0GHz, IDD(DC)=1500mA -15 VDD=5V 6V 7V 8V -20 -25 -30 IM3 -35 -40 -45 -50 IM5 -55 -60 20 21 22 23 24 25 26 27 28 29 30 21 22 23 24 25 26 27 28 29 30 2-tone Total Output Power [dBm] 2-tone Total Output Power [dBm] Intermodulation Distortion [dBc] VDD=5V 6V 7V 8V -20 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -20 31 32 33 34 2-tone Total Output Power [dBm] 5 31 32 33 34 FMM5820X Ka-Band Power Amplifier MMIC IMD vs. Output Power by Drain Current IMD vs. Output Power by Drain Current @f=29.5GHz, VDD=7V @f=29.75GHz, VDD=7V -15 -15 IDD(DC)=1300mA 1500mA 1700mA 1900mA -25 IM3 -30 -35 -40 -45 IM5 -50 -55 -60 -25 -30 IM3 -35 -40 -45 IM5 -50 -55 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 20 2-tone Total Output Power [dBm] @f=30.0GHz, VDD=7V -15 IDD(DC)=1300mA 1500mA 1700mA 1900mA -20 -25 -30 IM3 -35 -40 -45 IM5 -50 -55 -60 20 21 22 23 24 25 26 27 28 29 30 21 22 23 24 25 26 27 28 29 30 2-tone Total Output Power [dBm] IMD vs. Output Power by Drain Current Intermodulation Distortion [dBc] IDD(DC)=1300mA 1500mA 1700mA 1900mA -20 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -20 31 32 33 34 2-tone Total Output Power [dBm] 6 31 32 33 34 FMM5820X Ka-Band Power Amplifier MMIC S-Parameter @VDD=7V, IDD(DC)=1500mA 30 S11 25 S21 20 S22 15 Sxx [dB] 10 5 0 -5 -10 -15 -20 -25 -30 0 5 10 15 20 25 30 35 40 Frequency [GHz] 30 S11 S21 S22 25 20 15 Sxx [dB] 10 5 0 -5 -10 -15 -20 -25 -30 25 26 27 28 29 30 31 Frequency [GHz] 7 32 33 34 35 FMM5820X Ka-Band Power Amplifier MMIC S-Parameter VDD=7V, IDD=1500mA Freq. GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 29.2 29.4 29.6 29.8 30 30.2 30.4 30.6 30.8 31 32 33 34 35 36 37 38 39 40 S11 Mag. 1.000 0.999 0.996 0.996 0.989 0.987 0.983 0.982 0.982 0.975 0.976 0.972 0.969 0.975 0.969 0.971 0.952 0.955 0.950 0.951 0.937 0.949 0.936 0.937 0.931 0.914 0.804 0.647 0.468 0.440 0.399 0.380 0.337 0.306 0.282 0.243 0.188 0.160 0.140 0.294 0.465 0.606 0.657 0.722 0.799 0.851 0.859 0.869 Ang. -8.84 -17.66 -26.37 -34.93 -43.05 -50.92 -58.34 -65.47 -72.29 -78.95 -85.28 -91.04 -96.64 -101.60 -107.14 -113.35 -117.39 -122.71 -126.63 -131.24 -135.73 -140.89 -145.71 -150.80 -158.12 -167.84 179.46 171.95 167.28 166.82 167.70 165.35 165.07 165.99 165.32 166.41 172.86 -176.97 -160.53 -108.35 -114.03 -122.32 -124.85 -131.46 -137.43 -145.04 -147.72 -151.54 S21 Mag. Ang. 0.018 36.54 0.015 143.44 0.006 -82.94 0.002 163.03 0.005 -123.49 0.003 -96.08 0.003 -62.12 0.004 -122.20 0.004 -67.33 0.005 44.42 0.005 -44.57 0.003 -149.21 0.005 -47.61 0.006 -77.32 0.008 52.24 0.013 -23.85 0.007 -73.84 0.020 -95.86 0.010 -79.59 0.011 -61.73 0.008 23.94 0.005 -29.90 0.011 43.99 0.063 -13.13 0.424 -89.02 2.398 159.23 7.722 34.35 14.224 -92.06 17.900 146.98 17.789 123.51 17.899 100.05 17.595 79.78 16.941 57.74 16.452 36.28 15.515 15.36 14.801 -4.24 14.021 -24.82 13.350 -43.74 12.746 -63.98 9.312 -162.05 5.954 99.72 3.266 10.14 1.550 -74.90 0.650 -147.68 0.290 152.90 0.135 119.98 0.034 -45.15 0.011 2.17 8 S12 Mag. 0.001 0.000 0.001 0.001 0.001 0.003 0.002 0.002 0.003 0.003 0.003 0.002 0.004 0.006 0.005 0.004 0.005 0.005 0.005 0.006 0.001 0.001 0.006 0.006 0.006 0.006 0.008 0.003 0.009 0.011 0.010 0.016 0.010 0.007 0.005 0.008 0.011 0.004 0.009 0.013 0.003 0.015 0.004 0.010 0.006 0.008 0.001 0.009 Ang. 124.01 15.28 -45.86 -154.12 -86.15 -85.88 -108.04 -100.39 -87.88 -83.82 -101.83 -94.18 -99.30 -94.51 -82.14 -106.79 -112.94 -65.11 -108.92 -90.82 -42.84 -170.93 -70.45 -121.97 -77.70 -95.63 -84.40 -114.00 -98.96 -99.31 -89.98 -68.23 -75.84 -146.43 -102.11 -93.97 -78.28 -132.86 -84.49 -69.16 -115.53 -141.11 -141.37 -113.61 -27.36 -102.47 -29.35 -123.73 S21 Mag. 0.984 0.962 0.947 0.975 0.982 0.972 0.948 0.923 0.909 0.904 0.908 0.910 0.914 0.914 0.914 0.913 0.905 0.903 0.895 0.877 0.861 0.839 0.803 0.756 0.615 0.321 0.173 0.045 0.230 0.245 0.263 0.291 0.297 0.300 0.287 0.293 0.301 0.274 0.267 0.232 0.222 0.303 0.430 0.605 0.722 0.808 0.861 0.866 Ang. -61.76 -102.23 -123.54 -138.63 -150.35 -159.39 -166.26 -171.16 -174.58 -177.70 179.04 175.78 172.35 168.68 165.11 161.20 156.88 152.43 147.82 141.79 134.93 127.19 117.33 102.26 76.43 61.83 47.18 -104.08 -169.24 -175.41 179.90 175.02 166.30 158.16 153.01 148.54 141.72 138.48 134.17 107.88 66.80 6.06 -38.89 -68.64 -92.46 -111.31 -126.53 -138.77 FMM5820X Ka-Band Power Amplifier MMIC ∆Tch vs. Drain Voltage (Reference) IDD=1500mA Monunted on Cu-Plate(t=0.5mm) with AuSn soldering. 80 70 Δ Tch [℃ ℃] 60 50 40 30 20 10 0 4 5 6 7 8 9 VDD [V] MTTF vs. Tch 1.E+12 1.E+11 1.E+10 Ea=1.56eV MTTF (hrs) 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 100 150 Tch ( 9 200 ) 250 FMM5820X Ka-Band Power Amplifier MMIC ■ Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG1 0 275 VDD1 825 VDD3 VDD5 VDD7 1685 2345 3875 4225 2620 2515 2485 2620 2515 2485 1310 1310 135 105 0 135 105 0 0 275 (VGG2) 825 1685 VDD2 VDD4 2345 3875 VDD6 VDD8 4225 Chip Size : 4225± ±30um x 2620± ±30um Chip Thickness : 60± ±20um Bonding Pad Size : 160um x 80um NOTE: Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2). 10 FMM5820X Ka-Band Power Amplifier MMIC ■ Assembly Diagrams Recommended assembly 1 uF 100 pF 100 pF 100 pF 100 pF VGG 1 uF VDD RF_Out RF_in VDD 100 pF 100 pF 100 pF 100 pF 1 uF “Copper” is the recommended material for the package or carrier. 11 FMM5820X Ka-Band Power Amplifier MMIC ■DIE ATTACH 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature: 300 to 310 ℃ Time : less than 15 seconds AuSn Preform Volume : per next Figure Volume of Au-Sn Perform (10 -3/mm 3) 2500 2000 FMM5820X 1500 1000 500 0 0 2 4 6 8 10 12 14 16 18 20 Area of Chip Bach Surface (mm^2) ■ WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N ± 0.0196 N Stage Temperature : 215 ℃ ± 5 ℃ Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond 12 FMM5820X Ka-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-8738-1695 Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2006 Eudyna Devices Inc. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 13