1/2 GM882 NPN EPITAXIAL PLANAR T RANSISTOR Description The GM882 is suited for the output stage of 1.5W audio, voltage regulator , and relay driver. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Junction Temperature Symbol Ratings Tj +150 Unit Storage Temperature Collector to Base Voltage at Ta=25 Tstg -55 ~ +150 VCBO 40 V Collector to Emitter Voltage at Ta=25 VCEO 30 V Emitter to Base Voltage at Ta=25 VEBO 5.0 V Collector Current at Ta=25 IC 3.0 A Total Power Dissipation at Ta=25 PD 1.2 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 40 - - V IC=100uA ,IE=0 Test Conditions BVCEO 30 - - V IC=1mA,IB=0 BVEBO 5 - - V IE=10uA ICBO - - 1 uA VCB=30V VEB=3V IEBO - - 1 uA VCE(sat) - - 0.5 V IC=2A, IB=0.2A VBE(sat) - - 2 V IC=2A, IB=0.2A hFE1 30 - - hFE2 100 - 500 VCE=2V, IC=20mA VCE=2V, IC=1A FT - 90 - MHz Cob - 45 - Pf Classification Of hFE Rank Range Q 100-200 P 160-320 E 250-500 VCE=5V, IC=0.1A, f=100MHz VCB=10V,IE=0, f=1MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165