1/1 GM3019 NPN EPITAXIAL PLANAR TRANSISTOR Description The GM3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 140 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 7 V Collector Current IC 1 A Total Power Dissipation PD 1 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 140 - - V IC=100uA , IE=0 BVCEO 80 - - V IC=30mA. IB=0 BVEBO 7 - - V IE=100uA, IC=0 ICBO - - 50 nA VCB=90V 50 nA VBE=5V IC=150mA, IB=15mA IEBO VCE(sat) VBE(sat) - - 200 mV V Test Conditions - - 1.1 50 - - VCE=10V, IC=0.1mA hfe2 90 - - VCE=10V, IC=10mA hfe3 100 - 300 hfe4 50 hfe5 15 Cob - - 12 pF 100 - - MHz hfe1 fT IC=150mA, IB=15mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=10V, IC=1000mA VCB=10V, ,IE=0V,f=1MHz VCE=50V, IC=50mA, f=100MHz Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165