G M B TA 0 5 1/2 NPN SILICON TRANSISTOR Description The GMBTA05 is Amplifier Transistor. Package Dimensions REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Characteristics Symbol Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 60 60 4 500 225 Unit V V V mA mW at Ta = 25 Min. Typ. Max. Unit BVCBO 60 - - V IC=100uA Test Conditions BVCEO 60 - - V IC=1mA BVEBO 4 - - V IE=100uA ICBO - - 100 nA VCB=60V ICEO - - 100 nA VCE=60V *VCE(sat) - - 250 mV IC=100mA, IB=10mA VBE(sat) - - 1.2 V IC=100mA, VCE=1V *hFE1 50 - *hFE2 50 - - fT 100 - - VCE=1V, IC=10mA VCE=1V, IC=100mA MHz VCE=2V, IC=10mA, f=100MHz *Pulse Test:Pulse width 380us,Duty Cycle 2% 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165