ISSUED DATE :2005/06/24 REVISED DATE : GP4558 D U A L O P E R AT I O N A L A M P L I F I E R Description The GP4558 is a monolithic integrated circuit designed for dual operational amplifier. Features No frequency compensated required No latch-up Large common mode and differential voltage range Parameter tracking over temperature range Gain and phase match between amplifiers Internally frequency compensated Low noise input transistors Package Dimensions D E GAUGE PLANE c A REF. SEATING PLANE b Z L Z SECTION Z - Z b e Pin Configurations DIP-8 A A1 A2 b b1 b2 b3 c Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 Block Diagram 1/4 ISSUED DATE :2005/06/24 REVISED DATE : Absolute Maximum Ratings at Ta = 25 Parameter Supply Voltage Differential Input Voltage Input Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Symbol VCC VI(DIFF) VI PD TOPR TSTG VALUE ±22 ±18 ±15 600 0 ~ +70 -65 ~ +150 Electrical Characteristics (VCC=15V Vee=-15V, TA=25 ) Parameter SYMBOL Test Conditions Supply Current, all Amp, ICC no load Input Offset Voltage VIO RS<10k IIO Input Offset Current IBIAS Input Bias Current Common Mode Input Voltage VI(R) Large Signal Voltage Gain GV VO(P-P)=±10V, RL 2k Output Voltage Swing VO(P-P) RL 10k Common Mode Rejection Ratio CMRR RS 10k Supply Voltage Rejection Ratio PSRR RS 10k Power Consumption PC Vi=±10V, RL 2k , Slew Rate SR CL 100pF Vi=±20mV, RL 2k , Rise Time TRIS CL 100pF Vi=±20mV, RL 2k , Overshoot OS CL 100pF Input Resistance Ri Output Resistance RO f=1kHz, AV=20dB, RL=2k , Total Harmonic Distortion THD VO= 2VPP, CL=100pF Channel Separation VO1/VO2 Frequency Characteristics (VCC=15V Vee=-15V, TA=25 ) Parameter Unity Gain Bandwidth SYMBOL BW Test Conditions Unit V V V mW Min Typ. Max Unit - 2.3 4.5 mA ±12 20 70 76 - 2 5 30 ±13 200 ±12 90 90 70 6 200 500 ±14 170 mV nA nA V V/mV V dB dB mV 1.2 2.2 - V/ s - 0.3 - s - 15 - % 0.3 - 2 75 - - 0.008 - % - 120 - dB Min 2.0 Typ. 2.8 Max - Unit MHz M 2/4 ISSUED DATE :2005/06/24 REVISED DATE : Typical Performance Characteristics Fig 1. Burst Noise vs. Rs Fig 2. RMS Noise vs. Rs Fig 3. Output Noise vs. Rs Fig 4. Spectral Noise vs. Density Fig 5. Open Loop Frequency Response Fig 6. Phase Margin vs. Frequency 3/4 ISSUED DATE :2005/06/24 REVISED DATE : Fig 7. Positive Output Voltage Swing vs. Load Resistance Fig 8. Power Bandwidth (Large Signal) Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4