1/3 G S B 11 3 2 Description The GSB1132 is a epitaxial P N P E PI TA XI A L SI LI CO N T RA N SI STO R planar type PNP silicon transistor . Features Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions (IC/IB = -500mA / -50 mA) REF. Absolute Maximum Ratings (Ta = 25 Parameter A Millimeter Min. Max. 4.4 4.6 REF. B 4.05 4.25 H C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 G Millimeter Min. Max. 3.00 REF. 1.50 REF. L 5 M 0.70 REF. TYP. ,unless otherwise specified) Symbol Ratings Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Junction Temperature Collector Current(DC) Collector Current(PULSE) IC -1 A IC -2 A PD 0.5 W 2 W (note1) Collector Power Dissipation Collector Power Dissipation (note2) PD Note 1:Single pulse, PW=100ms Note 2: When mounted on a 40*40*0.7 mm ceramic board. Electrical Characteristics (Ta = 25 Symbol ,unless otherwise specified) Min. Typ. Max. Unit BVCBO -40 - - V IC=-50uA BVCEO -32 - - V IC=-1mA BVEBO -5 - - V IE=-50uA ICBO - - -0.5 uA VCB=-20V IEBO - - -0.5 uA VEB=-4V V VCE(sat) hFE fT - -0.2 -0.5 82 - 390 - 150 - MHz 20 30 pF Cob Note: Measured using pulse current. Unit Test Conditions IC=-500mA, IB=-50mA(note) VCE=-3V, IC=-100mA Classification Of hFE Rank P Q R RANGE 82 - 180 120 - 270 180 - 390 VCE=-5V, IE=-50mA, f=30MHz VCE=-10V, IE=0A, f=1MHz 2/3 Characteristics Curve 3/3 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX :86- 21-38950165