G M B TA 5 6 1/2 PNP SILICON TRANSISTOR Description The GMBTA56 is amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -80 V Emitter to Base Voltage VEBO -4 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -80 - - V IC=-100uA , IE=0 BVCEO -80 - - V IC=-1mA, IB=0 BVEBO -4 - - V IE=-100uA, IC=0 ICBO - - -100 nA VCB=-80V, IE=0 ICEO - - -100 nA VCE=-60V VCE(sat) - - -250 mV IC=-100mA, IB=-10mA - - -1.2 V 50 - - - - VBE(on) HFE1 HFE2 50 fT 100 Test Conditions VCE=-1V, IC=-100mA VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA MHz VCE=-2V, IC=-10mA, f=1MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165