PHOTODIODE Si APD S9717 series High reliability, surface-mount ceramic package S9717 series are Si APD (avalanche photodiodes) encapsulated in a surface-mount ceramic package that ensures high reliability in the same wide operating temperature range (-20 to +85 ˚C) as metal package devices. S9717 series also allows downsizing of equipment in various photometric application fields. Features Applications l Surface-mount package with high reliability equivalent to metal package (No dark current increase after high temperature/humidity testing at 85 ˚C, 85 % for 1000 hours.) lSmall, thin package: 3.5 × 4.0 mm lS9717-02K/-05K: Flat glass window S9717-05L: Lens glass window l Rangefinder lLaser rader lSpatial light transmission ■ General ratings Parameter Active area size S9717-02K φ0.2 Window material S9717-05K φ0.5 S9717-05L φ0.5 Borosilicate glass, φ0.8 lens Borosilicate glass Unit mm - ■ Absolute maximum ratings Parameter Operating temperature Storage temperature Symbol Topr Tstg Value -20 to +85 -55 to +125 Unit °C °C ■ Electrical and optical characteristics (Typ. Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Breakdown voltage Temp. coefficient of VBR Symbol λ λp S VBR Condition S9717-02K S9717-05L 50 500 1.5 S9717-05K 400 to 1000 800 0.5 150 200 0.65 100 1000 3 1000 900 900 M=100 λ=800 nm, M=1 Typ. ID=100 µA Max. - Dark current ID Terminal capacitance Ct Cut-off frequency fc Excess noise figure Gain x M Typ. M=100 Max. M=100, f=1 MHz M=100, RL=50 Ω λ=800 nm, -3 dB M=100 λ=800 nm 0.3 100 Unit nm nm A/W V V/°C 100 1000 3 pA pF MHz - 1 Si APD ■ Spectral response S9717 series ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C, λ=800 nm) 50 (Typ. Ta=25 ˚C) 1 nA PHOTO SENSITIVITY (A/W) M=100 DARK CURRENT 40 30 M=50 20 100 pA S9717-05K/-05L S9717-02K 10 pA 10 0 200 400 600 1 pA 1000 800 0 50 WAVELENGTH (nm) 100 150 200 REVERSE VOLTAGE (V) KAPDB0020EB KAPDB0101EA ■ Gain vs. reverse voltage (Typ. λ=800 nm) 10000 20 ˚C 0 ˚C 1000 GAIN -20 ˚C 100 40 ˚C 10 60 ˚C 1 80 100 120 140 160 180 REVERSE VOLTAGE (V) KAPDB0017EC ■ Dimensional outlines (uint: mm) S9717-02K/-05K S9717-05L (3 ×) 0.8 3.5 ± 0.2 (3 ×) 0.8 3.5 ± 0.2 ACTIVE AREA 1.27 (6 ×) R0.15 2.54 (1.25) (2 ×) 0.95 4.0 ± 0.2 (2 ×) 0.95 4.0 ± 0.2 (1.25) LENS 1.27 3.3 1.4 0.8 2.54 0.6 1.3 ANODE CATHODE GND 1.1 0.6 1.33 1.08 0.4 3.3 (6 ×) R0.15 KAPDA0032EA ANODE CATHODE GND KAPDA0033EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KAPD1014E02 Mar. 2006 DN