HANBit HMS1M32M8LA SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V Part No. HMS1M32M8LA GENERAL DESCRIPTION The HMS1M32M8LA is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board. The HMS1M32M8LA also support low data retention voltage for battery back-up operations with low data retention current. Eight chip enable inputs, (/CE0, /CE1, /CE2, /CE3, /CE4, /CE5, /CE6, /CE7) are used to enable the module’s 4M bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible. FEATURES PIN ASSIGNMENT w Part identification - HMS1M32M8LA : SIMM design w Access times : 55ns, 70ns PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-density 4MByte design 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Vcc Vcc Vss Vss Vss Vss Vss DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 A2 A9 DQ12 DQ4 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 /OE /CE3 A15 A14 /CE6 /CE7 /CE4 /CE5 A17 A16 /CE2 Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 DQ27 DQ19 A3 A10 A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss A18 /WE /CE1 /CE0 w High-reliability, low-power design w Single + 5V ±0.5V power supply w Low data retention voltage : 2V(min) w Three state output and TTL-compatible w FR4-PCB design w Low profile 72-Pin SIMM OPTIONS MARKING w Timing 55ns access -55 70ns access -70 w Packages 72-pin SIMM M 72-pin ZIP Z SIMM TOP VIEW URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 1 HANBit Electronics Co.,Ltd. HANBit HMS1M32M8LA FUNCTIONAL BLOCK DIAGRAM DQ 0-DQ31 A0-A18 32 19 A0-18 A0-18 /WE DQ24-31 U4 /OE DQ24-31 /WE U8 /OE /CE /CE /CE3 /CE7 A0-18 /WE A0-18 DQ16-23 /WE U3 /OE DQ16-23 U7 /OE /CE /CE /CE6 /CE2 A0-18 A0-18 /WE DQ 8-15 /WE U2 /OE /CE /CE1 A0-18 A0-18 /WE /OE /OE DQ 0-7 /WE U1 /OE /CE4 Rev. 1.0 (September / 2002) /WE DQ 0-7 U5 /OE /CE /CE URL: www.hbe.co.kr U6 /OE /CE /CE5 DQ 8-15 /CE0 2 HANBit Electronics Co.,Ltd. HANBit HMS1M32M8LA TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +7.0V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +7.0V Power Dissipation PD 8W o -65 C to +150oC 0oC to +70oC Voltage on Any Pin Relative to Vss Storage Temperature TSTG Operating Temperature TA w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C ) PARAMETER * SYMBOL MIN TYP. MAX Supply Voltage VCC 4.5V 5.0V 5.5V Ground VSS 0 0 0 Input High Voltage VIH 2.2 - Vcc+0.5V** Input Low Voltage VIL -0.5* - 0.8V VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1) (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current TEST CONDITIONS VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC SYMBOL MIN MAX UNITS ILI -8 8 µA IL0 -8 8 µA 2.4 Output High Voltage IOH = -4.0mA VOH Output Low Voltage IOL = 8.0mA VOL V 0.4 V * Vcc=5.0V, Temp=25 oC URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 3 HANBit Electronics Co.,Ltd. HANBit HMS1M32M8LA DC AND OPERATING CHARACTERISTICS (2) DESCRIPTION TEST CONDITIONS Power Supply -70 lCC 80 80 mA /CE=VIH, Other inputs=VIL or VIH lSB 24 24 mA /CE≥Vcc-0.2V, Other inputs=0~Vcc lSB1 640 640 µA VIH, Read Power Supply Current:Standby UNIT -55 IIO=0mA,/CE=VIL, VIN=VIL or Current:Operating MAX SYMBOL CAPACITANCE DESCRIPTION Input /Output Capacitance Input Capacitance TEST CONDITIONS SYMBOL MAX UNIT VI/O=0V CI/O 64 pF CIN 80 pF VIN=0V * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified) Test conditions PARAMETER VALUE Input Pulse Level 0.8 to 2.4V Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 1.5V Output Load CL=100pF + 1TTL * See test condition of DC and Operating characteristics Output Load (B) Output Load (A) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ VL=1.5V +3.3V 50Ω DOUT 319Ω DOUT Z0=50Ω 30pF URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 4 353Ω 5pF* HANBit Electronics Co.,Ltd. HANBit HMS1M32M8LA READ CYCLE -55 PARAMETER -70 SYMBOL UNIT MIN MAX 55 MIN MAX Read Cycle Time tRC Address Access Time tAA 55 70 70 ns ns Chip Select to Output tCO 55 70 ns Output Enable to Output tOE 25 35 ns Output Enable to Low-Z Output tOLZ 5 5 ns Chip Enable to Low-Z Output tLZ 10 10 ns Output Disable to High-Z Output tOHZ 0 20 0 25 ns Chip Disable to High-Z Output tHZ 0 20 0 25 ns Output Hold from Address Change tOH 10 10 ns WRITE CYCLE PARAMETER -55 SYMBOL MIN -70 MAX MIN MAX UNIT Write Cycle Time tWC 55 70 ns Chip Select to End of Write tCW 45 60 ns Address Set-up Time tAS 0 0 ns Address Valid to End of Write tAW 45 60 ns Write Pulse Width tWP 40 50 ns Write Recovery Time tWR 0 0 ns Write to Output High-Z tWHZ 0 Data to Write Time Overlap tDW 25 20 0 30 25 ns ns Data Hold from Write Time tDH 0 0 ns End of Write to Output Low-Z tOW 5 5 ns TIMING DIAGRAMS Please refer to timing diagram chart(II) URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 5 HANBit Electronics Co.,Ltd. HANBit HMS1M32M8LA FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z l SB, l SB1 L H H Output Disable High-Z lCC L H L Read DOUT lCC L L X Write DIN lCC Note: X means Don't Care DATA RETENTION CHARACTERISTICS* (TA = 0 to 70 ℃ ) PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT VCC for Data Retention VDR /CE≥ VCC-0.2V 2 5.5 V Data Retention Current IDR VCC=3.0V, /CE≥ VCC-0.2V - 320 µA VIN≥ VCC-0.2V or VIN≤ 0.2V Data Retention Set-up Time Recovery Time tSDR See Data Retention 0 - ns tRDR Wave forms(below) 5 - ns * L-Version Only DATA RETENTION WAVEFORM 1 (/CE Controlled) tSDR Data Retention Mode tRDR Vcc 4.5V 2.2V VDR /CE /CE≥ Vcc- 0.2V Vss URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 6 HANBit Electronics Co.,Ltd. HANBit HMS1M32M8LA PACKAGING DIMENSIONS SIMM Design 2.54 mm MIN 0.25 mm MAX 1.27±0.08 mm Gold : 1.04±0.10 mm Solder : 0.914±0.10 mm 1.27 (Solder & Gold Plating Lead) ORDERING INFORMATION Component Part Number Density Org. Package HMS1M32M8LA-55 4MByte 1M×32bit 72Pin-SIMM 8EA HMS1M32M8LA-70 4MByte 1M×32bit 72Pin--SIMM 8EA URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 7 Number Vcc SPEED 5.0V 55ns 5.0V 70ns HANBit Electronics Co.,Ltd.