HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBT28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier applications. SOT-23 Features • Excellent hFE Linearity • High DC Current Gain • High Power Dissipation Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................................................................................... 40 V VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current .......................................................................................................................................... 1.25 A IB Base Current .................................................................................................................................................. 0.4 A Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V IC=100uA, IE=0 BVCEO 20 - - V IC=1mA, IB=0 BVEBO 6 - - V IE=100uA, IC=0 ICBO - - 100 nA VCB=35V, IE=0 IEBO - - 100 nA VEB=6V, IC=0 *VCE(sat) - - 0.55 V IC=600mA, IB=20mA *hFE1 290 - - VCE=1V, IC=1mA *hFE2 300 - 1000 VCE=1V, IC=0.1A hFE3 300 - - VCE=1V, IC=0.3A hFE4 300 - - VCE=1V, IC=0.5A fT 100 - - MHz Cob - 9 - pF VCE=10V, IC=50mA, f=1MHz VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE2 Rank (Marking Code) B (3FB) C (3FC) D (3FD) Range 300-550 500-700 650-1000 HM28S HSMC Product Specification HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 1000 VCE(sat) @ IC=30IB o Saturation Voltage (mV) hFE 125 C o 75 C o 25 C hFE @ VCE=1V 100 o 75 C o 25 C o 125 C 10 100 0.1 1 10 100 0.1 1000 Collector Current-IC (mA) 10 100 1000 Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage Cutoff Frequency & Collector Current 1000 Cutoff Frequency (MHz)... 100 Capacitance (pF) 1 10 Cob 1 fT 100 10 1 0.1 1 10 100 1000 Reverse Biased Voltage (V) 1 10 100 1000 Collector Current (mA) -VCE=10V PD-Ta Power Dissipation-PD (mW) 250 200 150 100 50 0 0 50 100 150 200 o Ambient Temperature-Ta ( C) HM28S HSMC Product Specification HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 3/4 MICROELECTRONICS CORP. SOT-23 Dimension DIM A B C D G H J K L S V Marking: A Rank Code L (B,C,D) 3 F Pb Free Mark 3 Pb-Free: " " (Note) Normal: None B S 1 V 2 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. G Pin Style: 1.Base 2.Emitter 3.Collector D H K Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 C Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 J 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM28S HSMC Product Specification HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HM28S o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification