HSMC H9435S

HI-SINCERITY
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
MICROELECTRONICS CORP.
H9435S
•
P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)
8-Lead Plastic SO-8
Package Code: S
H9435S Symbol & Pin Assignment
Features
5
4
6
3
• RDS(on)=60mΩ@VGS=-10V, ID=-5.3A
7
2
• RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A
8
1
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o
A
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current (Continuous)
-5.3
A
IDM
Drain Current (Pulsed) *1
-20
A
PD
Total Power Dissipation @TA=25oC
2.5
W
-55 to +150
°C
30
°C/W
50
°C/W
Tj, Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (PCB mounted)
*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
H9435S
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VGS=0V, ID=-250uA
30
-
-
V
VGS=-4.5V, ID=-4.2A
-
82
90
VGS=-10V, ID=-5.3A
-
50
60
• Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Body Leakage Current
VGS=±20V, VDS=0V
-
-
±100
nA
gFS
Forward Transconductance
VDS=-15V, ID=-5.3A
4
7
-
S
-
9.52
-
-
3.43
-
mΩ
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
-
1.71
-
Ciss
Input Capacitance
-
551.57
-
Coss
Output Capacitance
-
90.96
-
Crss
Reverse Transfer Capacitance
-
60.79
-
td(on)
Turn-on Delay Time
-
10.8
-
tr
Turn-on Rise Time
VDD=10V, RL=15Ω, ID=-1A,
-
2.33
-
td(off)
Turn-off Delay Time
VGEN=-10V, RG=6Ω
-
22.53
-
-
3.87
-
-
-
-1.9
A
-
-
-1.3
V
tf
VDS=-15V, ID=-5.3A, VGS=-10V
VDS=-15V, VGS=0V, f=1MHz
Turn-off Fall Time
nC
PF
Ns
• Drain-Source Diode Characteristics
IS
VSD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
VGS=0V, IS=-5.3A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
H9435S
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
MICROELECTRONICS CORP.
SO-8 Dimension
A
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
H9435S Marking:
G
Pb Free Mark
Pb-Free: " . " (Note) H
Normal: None
8
7
B
6
C
Pin1 Index
2
3
I
5
Pin 1 Index
Date Code
H
4
Note: Green label is used for pb-free packing
E
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
K
Part A
Part A
Control Code
Pin Style: 1,2,3: Source 4: Gate 5,6,7,8: Drain
J
D
S
9 4 3 5
M
L
N
Min.
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
0.05
0.30
0.19
0.37
0.23
0.08
0.00
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
0.20
0.70
0.25
0.52
0.28
0.13
0.15
*: Typical, Unit: mm
O
F
8-Lead SO-8 Plastic
Surface Mounted Package
HSMC Package Code: S
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H9435S
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3oC/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245oC ±5oC
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H9435S
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification