ETC 2SB1187

Product Specification
www.jmnic.com
2SB1187
Silicon Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low saturation voltage
・Complement to type 2SD1761
・Excellent DC current gain characteristics
・Wide safe operating area
APPLICATIONS
・For low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
3
A
ICM
Collector current-Peak
6
A
PC
Collector power dissipation
TC=25℃
30
W
PC
Collector power dissipation
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
2SB1187
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage
IC=1mA , IB=0
60
V
VCBO
Collector-base breakdown voltage
IC=50μA , IE=0
80
V
VEBO
Emitter-base breakdown voltage
IE=50μA , IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2A IB=0.2A
1.0
V
VBEsat
Emitter-base saturation voltage
IC=2A IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=60V IE=0
10
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
10
μA
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
12
MHz
Cob
Output capacitance
IE=0 ; VCB=10V ,f=1MHz
100
Pf
JMnic
MIN
TYP.
60
MAX
UNIT
320
Product Specification
www.jmnic.com
2SB1187
Silicon Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic