JMNIC 2SA837

JMnic
Product Specification
2SA837
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Wide area of safe operation
・Complement to type 2SC1667
APPLICATIONS
・For radio frequency and power amplifier
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-90
V
VCEO
Collector-emitter voltage
Open base
-90
V
VEBO
Emitter-base voltage
Open collector
-5
V
-4
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=75℃
JMnic
Product Specification
2SA837
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
-90
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-90
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ; IC=0
-5
V
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5
V
ICBO
Collector cut-off current
VCB=-90V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-4V
COB
Collector output capacitance
IE=0; VCB=-10V;f=1MHz
200
pF
Transition frequency
IC=-1A ; VCE=-10V
10
MHz
VCEsat
fT
CONDITIONS
2
MIN
TYP.
40
MAX
UNIT
200
JMnic
Product Specification
2SA837
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3