NIKO-SEM P6503NJG N- & P-Channel Enhancement Mode Field Effect Transistor TSOPJW-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30 65mΩ 4A P-Channel -30 150mΩ -3A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 4 -3 3 -2 10 -10 Continuous Drain Current TC = 25 °C ID TC = 70 °C Pulsed Drain Current 1 Power Dissipation IDM TC = 25 °C 2 PD TC = 70 °C A W 1.3 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient SYMBOL TYPICAL RθJA MAXIMUM UNITS 110 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 1 Mar-18-2005 NIKO-SEM P6503NJG N- & P-Channel Enhancement Mode Field Effect Transistor TSOPJW-8 Lead-Free ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA N-Ch 30 VGS = 0V, ID = -250µA P-Ch -30 VDS = VGS, ID = 250µA N-Ch 0.9 1.5 2.5 VDS = VGS, ID = -250µA P-Ch -0.9 -1.5 -2.5 VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = 24V, VGS = 0V N-Ch 1 P-Ch -1 VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 V(BR)DSS Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V, TJ = 55 °C On-State Drain Current 1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 3A 1 Drain-Source On-State Resistance VGS = -4.5V, ID = -2A 10 P-Ch -10 µA N-Ch 72 120 P-Ch 170 250 mΩ N-Ch 48 65 P-Ch 100 150 N-Ch 6 P-Ch 3 N-Channel N-Ch 5 7.5 VDS = 0.5V (BR)DSS, VGS = 10V, P-Ch 5.5 6.6 ID = 3A N-Ch 0.8 P-Channel P-Ch 1.2 VDS = 0.5V (BR)DSS, VGS = -10V, N-Ch 1.0 ID = -2A P-Ch 0.9 VGS = -10V, ID = -3A gfs nA A RDS(ON) VGS = 10V, ID = 4A Forward Transconductance1 N-Ch V VDS = 10V, ID = 3A VDS = -10V, ID = -2A S DYNAMIC Total Gate Charge2 Qg Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd 2 nC Mar-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor Turn-On Delay Time2 N-Channel td(on) VDS = 15V, RL = 15Ω Rise Time2 Turn-Off Delay Time2 tr ID ≅ 1A, VGS = 10V, RGEN = 6Ω td(off) P-Channel VDS = -15V, RL = 15Ω 2 Fall Time tf ID ≅ -1A, VGS = -10V, RGEN = 6Ω P6503NJG TSOPJW-8 Lead-Free N-Ch 7 11 P-Ch 8 12 N-Ch 12 18 P-Ch 11 18 N-Ch 12 18 P-Ch 14 21 N-Ch 7 11 P-Ch 8 12 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) IF = 0.9A, VGS = 0V Forward Voltage1 VSD IF = -0.9A, VGS = 0V Reverse Recovery Time trr IF = 0.9A, dlF/dt = 100A / µS IF = -0.9A, dlF/dt = 100A / µS N-Ch 1.2 P-Ch -1.2 N-Ch 40 80 P-Ch 40 80 V nS Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THIS PRODUCT MARKED WITH “50YWW” Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 50YWW Marking Description: 5 - N+P MOSFET 0 - Serial Number Y - Year W - Week 3 Mar-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJG TSOPJW-8 Lead-Free N-CHANNEL 4 Mar-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 5 P6503NJG TSOPJW-8 Lead-Free Mar-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJG TSOPJW-8 Lead-Free P-CHANNEL 6 Mar-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 7 P6503NJG TSOPJW-8 Lead-Free Mar-18-2005 NIKO-SEM P6503NJG N- & P-Channel Enhancement Mode Field Effect Transistor TSOPJW-8 Lead-Free TSOPJW-8 MECHANICAL DATA mm Mm Dimension Dimension Min. Typ. Max. A 2.95 3.05 3.10 H B 2.30 2.40 2.50 I C 2.65 2.85 3.05 J 7° NOM D 0.25 0.32 0.40 K 0.04 REF. E 0.65BSC L F 0.925 1.00 M G 0.01 0.1 N Min. Typ. Max. 0.30 0.45 0.60 0.1 J 0.15 0.20 K F L G D I H E M B C A 8 Mar-18-2005