UT54ACS374/UT54ACTS374 Radiation-Hardened Octal D-Type Flip-Flops with Three-State Outputs PINOUTS FEATURES 20-Pin DIP Top View 8 latches in a single package Three-state bus-driving true outputs Full parallel access for loading radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 20-pin DIP - 20-lead flatpack OC 1Q 1 2 20 19 VDD 8Q 1D 2D 3 18 8D 4 17 7D 2Q 5 16 7Q 3Q 3D 6 7 15 14 6Q 6D 4D 4Q 8 9 13 12 5D 5Q 10 11 CLK VSS DESCRIPTION 20-Lead Flatpack Top View The UT54ACS374 and the UT54ACTS374 are non-inverting octal D type flip-flops with three-state outputs designed for driving highly capacitive or relatively low-impedance loads. The device is suitable for buffer registers, I/O ports, and bidirectional bus drivers. The eight flip-flops are edge triggered D-type flip-flops. On the positive transition of the clock the Q outputs will follow the data (D) inputs. An output-control input (OC) places the eight outputs in either a normal logic state (high or low logic level) or a high-impedance state. The high-impedance third state and increased drive provide the capability to drive the bus line in a bus-organized system without the need for interface or pull-up components. The output control OC does not affect the internal operations of the flip-flops. Old data can be retained or new data can be entered while the outputs are off. OC 1 20 VDD 1Q 2 19 8Q 1D 3 18 8D 2D 2Q 4 5 17 16 7D 7Q 3Q 6 15 6Q 3D 7 14 6D 4D 4Q VSS 8 9 10 13 12 11 5D 5Q CLK LOGIC SYMBOL OC CLK (1) (11) EN C1 The devices are characterized over full military temperature range of -55 C to +125 C. FUNCTION TABLE INPUTS OC 223 CLK OUTPUT nD nQ L H H L L L L L X nQ0 H X X Z 1D (3) (4) 2D 3D (7) (8) 4D 5D (13) 6D (14) 7D (17) 8D (18) 1D (2) 1Q (5) 2Q (6) 3Q (9) 4Q (12) 5Q (15) 6Q (16) 7Q (19) 8Q Note: 1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. RadHard MSI Logic UT54ACS374/UT54ACTS374 LOGIC DIAGRAM 8D 7D (18) 6D (17) 5D (14) 4D (13) 3D (8) 2D CLK OC 1D (7) (4) (3) DC D C DC D C D C D C D C D C Q Q Q Q Q Q Q Q (19) 8Q (16) 7Q (15) 6Q (12) 5Q (9) 4Q (6) 3Q (5) 2Q (11) (1) (2) 1Q RADIATION HARDNESS SPECIFICATIONS 1 PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU Threshold 2 80 MeV-cm2/mg SEL Threshold 120 MeV-cm2/mg Neutron Fluence 1.0E14 n/cm2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 7.0 V VI/O Voltage any pin -.3 to VDD +.3 V TSTG Storage Temperature range -65 to +150 C TJ Maximum junction temperature +175 C TLS Lead temperature (soldering 5 seconds) +300 C Thermal resistance junction to case 20 C/W II DC input current 10 mA PD Maximum power dissipation 1 W JC Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RadHard MSI Logic 224 UT54ACS374/UT54ACTS374 RECOMMENDED OPERATING CONDITIONS 225 SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage 4.5 to 5.5 V VIN Input voltage any pin 0 to VDD V TC Temperature range -55 to + 125 ×C RadHard MSI Logic UT54ACS374/UT54ACTS374 DC ELECTRICAL CHARACTERISTICS 7 (VDD = 5.0V 10%; V SS = 0V 6, -55 C < TC < +125 C) SYMBOL VIL VIH IIN PARAMETER CONDITION MIN Low-level input voltage 1 ACTS ACS High-level input voltage 1 ACTS ACS MAX UNIT 0.8 .3VDD V .5VDD .7VDD V Input leakage current ACTS/ACS VIN = VDD or VSS Low-level output voltage 3 ACTS ACS IOL = 8.0mA IOL = 100 A High-level output voltage 3 ACTS ACS IOH = -8.0mA IOH = -100 A IOZ Three-state output leakage current VO = VDD and VSS -20 20 A IOS Short-circuit output current 2 ,4 ACTS/ACS VO = VDD and VSS -200 200 mA Output current10 VIN = VDD or VSS 8 mA (Sink) VOL = 0.4V Output current10 VIN = VDD or VSS -8 mA (Source) VOH = VDD - 0.4V Ptotal Power dissipation 2, 8, 9 CL = 50pF 1.9 mW/ MHz IDDQ Quiescent Supply Current VDD = 5.5V 10 A Quiescent Supply Current Delta For input under test 1.6 mA VOL VOH IOL IOH IDDQ ACTS -1 1 A 0.40 0.25 V .7VDD VDD - 0.25 V VIN = VDD - 2.1V For all other inputs VIN = VDD or VSS VDD = 5.5V CIN COUT Input capacitance 5 = 1MHz @ 0V 15 pF Output capacitance 5 = 1MHz @ 0V 15 pF RadHard MSI Logic 226 UT54ACS374/UT54ACTS374 Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = VIH (min) + 20%, - 0%; VIL = VIL(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF/MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 6. Maximum allowable relative shift equals 50mV. 7. All specifications valid for radiation dose 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. 10. This value is guaranteed based on characterization data, but not tested. 227 RadHard MSI Logic WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com