PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 39 100 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 22 80 3.4 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD TC = 25°C 694 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute IISOL < 1 mA, 10 seconds Md Mounting torque Terminal torque 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. Weight 30 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 800 μA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) g TJ = 125°C VGS = 10 V, ID = 0.5 ITD25, Note 1 V 5.0 V ± 200 nA 50 1.5 μA mA 190 mΩ = 800 V = 39 A Ω ≤ 190 mΩ ≤ 250 ns miniBLOC, SOT-227 B (IXFN) E153432 S G S G = Gate S = Source D D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density DS99503E(06/06) © 2006 IXYS All rights reserved IXFN 44N80P Symbol gfs Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5 ID25, Note 1 27 Ciss 43 S 12 nF 910 pF Crss 30 pF td(on) 28 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 1 Ω (External) 75 ns 27 ns 200 nC 67 nC 65 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd SOT-227B (IXFN) Outline (M4 screws (4x) supplied) 0.18 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 44 A ISM Repetitive 100 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 22 A, -di/dt = 100 A/μs 250 ns QRM VR = 100 V, VGS = 0 V IRM 0.8 μC 8.0 A Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2% IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2 IXFN 44N80P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Characte ris tics @ 25° C @ 25° C 100 45 V GS = 10V 40 7V 80 35 70 6V 30 I D - Amperes I D - Amperes V GS = 10V 90 7V 25 20 15 5V 60 6V 50 40 30 10 20 5 10 5V 0 0 0 1 2 3 4 5 6 7 0 8 3 6 9 V D S - V olts 15 18 21 24 27 30 V D S - V olts Fig. 3. Output Characte r is tics Fig. 4. RDS(on ) Nor m alize d to ID = 22A V alue vs . Junction Te m pe rature @ 125° C 2.6 45 V GS = 10V 40 2.4 V GS = 10V 7V R D S ( o n ) - Normalized 35 6V I D - Amperes 12 30 25 20 5V 15 10 5 2.2 2.0 1.8 I D = 44A 1.6 I D = 22A 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 12 14 -50 16 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to ID = 22A V alue vs . Drain Curr e nt Fig . 6. Dr ain Cu r r e n t vs . Cas e T e m p e r atu r e 44 2.4 V GS = 10V 2.2 40 TJ = 125 ° C 32 I D - Amperes R D S ( o n ) - Normalized 36 2 1.8 1.6 1.4 28 24 20 16 12 1.2 TJ = 25 ° C 8 1 4 0 0.8 0 10 20 30 40 50 60 I D - A mperes © 2006 IXYS All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFN 44N80P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 90 70 80 60 TJ = - 40 ° C 70 40 25 ° C 20 125 ° C 50 40 fs - 40 ° C 30 25 ° C 60 - Siemens TJ = 125 ° C 30 g I D - Amperes 50 20 10 10 0 0 3.5 4 4.5 5 5.5 6 0 6.5 10 20 30 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage 50 60 70 80 150 175 200 Fig. 10. Gate Charge 10 140 9 V DS = 400V 8 I D = 22A 7 I G = 10m A 120 V G S - Volts 100 I S - Amperes 40 I D - A mperes 80 60 40 6 5 4 3 TJ = 125 ° C 2 TJ = 25 ° C 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 V S D - V olts 25 50 75 Q G 100 125 - NanoCoulombs Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is tan ce Fig. 11. Capacitance 1. 00 100000 f = 1MH z 10000 R( t h ) J C - ºC / W Capacitance - PicoFarads C is s C os s 1000 100 0. 10 C rss 10 0. 01 0 5 10 15 20 25 30 35 40 V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 0. 001 0. 01 0.1 Puls e Width - Sec onds 1 10