VBO 125 IdAVM = 124 A VRRM = 1200-1800 V Single Phase Rectifier Bridge VRSM VRRM V V 900 1200 1400 1600 1800 800 1200 1400 1600 1800 + Type VBO VBO VBO VBO VBO Conditions IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0 I2t ~ ~ 125-08NO7 125-12NO7 125-14NO7 125-16NO7 125-18NO7 Symbol ~ – ~ Maximum Ratings 124 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1950 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1600 1800 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 16200 16000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 12800 13600 A2s A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ ±15% ±15% ±15% ±15% Nm lb.in. Nm lb.in. 225 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M5) t = 1 min t=1s 5 44 5 44 Terminal connection torque (M5) Weight typ. Symbol Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM ≤ ≤ 0.3 8.0 mA mA VF IF = 150 A; TVJ = 25°C ≤ 1.3 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 3 V mΩ RthJC per per per per 0.83 0.138 1.13 0.188 K/W K/W K/W K/W RthJK + Features • Package with screw terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values diode; 180° module; 180° diode; 180° module; 180° IXYS reserves the right to change limits, test conditions and dimensions. 1-2 316 Data according to IEC 60747 refer to a single diode unless otherwise stated. © 2003 IXYS All rights reserved VBO 125 I F(OV) -----I FSM 200 10 IFSM (A) A TVJ=45°C 160 T=150°C 2 As TVJ=150°C 1800 1.6 5 1600 1.4 120 1.2 10 80 4 TVJ=45°C TVJ=150°C 1 0 V RRM 0.8 1/2 V RRM 40 T=25°C 0.6 IF 0 VF 1 10 0.4 1.5 V 10 Fig. 1 Forward current versus voltage drop per diode 300 [W] 1 V RRM 0 1 2 10 t[ms] 10 10 3 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 3 2 1 4 t [ms] 0.19 0.11 150 250 DC sin.180° rec.120° rec.60° rec.30° [A] = RTHCA [K/W] 90 0.28 95 100 200 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor 85 PSB 125 6 100 105 0.44 110 115 150 120 50 0.77 125 100 DC 130 sin.180° 135 1.77 50 140 rec.60° 145 rec.30° PVTOT 0 IdAV 0 rec.120° °C 50 100 TC(°C) 150 F4 200 150 50 100 IFAVM 0 [A] 50 100 Tamb 150 [K] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 1.5 K/W Z thJK Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 316 Fig. 6 Transient thermal impedance per diode or thyristor, calculated 2-2