Single Phase Rectifier Bridges PSB 112 IdAVM VRRM = 84 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 112/08 PSB 112/12 PSB 112/14 PSB 112/16 PSB 112/18 Symbol Test Conditions IdAVM IFSM TC = 100°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 84 1200 1300 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1100 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7200 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5000 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ 5 5 270 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered, E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 5.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.7 0.8 5 V V mΩ per diode; DC current per module 0.85 0.2125 K/W K/W RthJK per diode; DC current per module 1.05 0.263 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10.0 9.4 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 112 10 IF(OV) -----IFSM 200 IFSM (A) TVJ=45°C TVJ=150°C [A] 1.6 900 4 2 As 780 150 1.4 1.2 100 TVJ=45°C 1 0 VRRM 50 TVJ=150°C 0.8 1/2 VRRM IF Tvj = 150°C 0 0.5 0.6 Tvj = 25°C 1 1.5 VF [V] 10 0.4 2 10 Fig. 1 Forward current versus voltage drop per diode 300 [W] 1 VRRM 0 10 1 t[ms] 10 2 10 3 1 2 3 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode 80 PSB 112 0.18 0.1 0.26 250 = RTHCA [K/W] TC 85 90 95 100 200 100 DC [A] sin.180° rec.120° 80 rec.60° rec.30° 105 0.43 110 150 60 115 0.76 100 PVTOT 0 130 1.76 135 40 IdAV 145 0 °C 80 0 [A] 60 Tamb 50 100 [K] 20 140 150 20 IFAVM 40 125 DC sin.180° rec.120° rec.60° rec.30° 50 120 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 100 150 200 T (°C) C Fig.5 Maximum forward current at case temperature 1.5 K/W Z thJK 1 Z thJC 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions